MG150J7KS50 TOSHIBA Semiconductor CORPORATION, MG150J7KS50 Datasheet
MG150J7KS50
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MG150J7KS50 Summary of contents
Page 1
... The electrodes are isolated from case. High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l l High speed type IGBT : Inverter stage : V CE (sat 0.5µs (max) (@ 0.3µs (max) (@I rr Outline : TOSHIBA 2-110A1B l Weight: 520g l Equivalent Circuit MG150J7KS50 = 2.8V (max) (@I = 150A 150A 150A MG150J7KS50 2001-08-16 ...
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... Inductive load V = 300V 150A ±15V 9.2Ω off trr Transistor stage R th (j-c) Diode stage R Case to fin th (c-f) 2 MG150J7KS50 Unit °C °C V N·m Min Typ. Max = 0 ― ― ±500 = 0 ― ― 1.0 5.0 ― 8.0 ― 2.2 2.8 ― 12.0 ― ...
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... Inductive load V = 300V 50A ±15V 24Ω off trr Transistor stage R th (j-c) Diode stage R Case to fin th (c-f) 3 MG150J7KS50 Unit °C °C V N·m Min Typ. Max = 0V ― ― ±500 = 0V ― ― 1.0 5.0 ― 8.0 ― 2.0 2.5 ― 4.0 ― ...
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... Note 1: Switching Time Test Circuit &Timing Chat 4 MG150J7KS50 2001-08-16 ...
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... Package Dimensions TOSHIBA 2-110A1B 5 MG150J7KS50 Unit: mm 2001-08-16 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 MG150J7KS50 000707EAA 2001-08-16 ...