MG600J2YS60A TOSHIBA Semiconductor CORPORATION, MG600J2YS60A Datasheet

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MG600J2YS60A

Manufacturer Part Number
MG600J2YS60A
Description
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MG600J2YS60A
Manufacturer:
TOSHIBA
Quantity:
28
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MG600J2YS60A
Manufacturer:
TOSHIBA
Quantity:
560
Price:
High Power Switching Applications
Motor Control Applications
·
·
·
·
Equivalent Circuit
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature)
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
MG600J2YS60A (600V/600A 2in1)
= 2.1 V (typ.)
5
6
7
4
1
2
3
Signal terminal
1.
5.
OT
G (H)
G (L)
F
F
O
O
TOSHIBA IGBT Module Silicon N Channel IGBT
2.
6.
C1
E2
F
F
O
O
(H)
(L)
3.
7.
E1/C2
E (H)
E (L)
1
4.
8.
Open
V
D
MG600J2YS60A
2002-09-06

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MG600J2YS60A Summary of contents

Page 1

... TOSHIBA IGBT Module Silicon N Channel IGBT MG600J2YS60A (600V/600A 2in1) High Power Switching Applications Motor Control Applications · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. · ...

Page 2

... Package Dimensions: 2-123C1B 1. 5. Signal Terminal Layout 2.54 Weight: 375 MG600J2YS60A Open (H) 8. Open 2002-09-06 ...

Page 3

... C V ies (on) = 300 600 off = ± 600 Symbol Test Condition = ¾ 300 (Fo MG600J2YS60A Rating Unit 600 V ±20 V 600 A 1200 600 A 1200 2770 150 °C -40~125 °C -20~100 °C 2500 (AC 1 min (M5) N・m Min Typ. Max = 0 ¾ ¾ +3/- ¾ ¾ 100 = 0 ¾ ...

Page 4

... Switching Time Test Circuit Timing Chart (on) Symbol Test Condition Inverter IGBT stage R th (j-c) Inverter FRD stage R With silicon compound th (c- 90 (off) 4 MG600J2YS60A Min Typ. Max ¾ ¾ 0.045 ¾ ¾ 0.068 ¾ ¾ 0.013 90% 10 2002-09-06 Unit °C/W °C/W ...

Page 5

... For parallel use of this product, please use the same rank for both V parallel without fail (sat must be provided higher than 13.8 V. may not be output even under error conditions. O Min Max 1.5 1.8 1.7 2.0 1.9 2.2 2.1 2.4 5 MG600J2YS60A and VF among IGBT in CE (sat) 2002-09-06 ...

Page 6

... 125°C 500 400 10 V 300 200 9 V 100 Collector-emitter voltage V 12 Common emitter 125° Gate-emitter voltage V 1000 Common emitter 800 600 400 200 600 Gate-emitter voltage V 6 MG600J2YS60A I – ( – 900 A 300 A 600 ( – 25° 125°C -40° (V) GE ...

Page 7

... Collector current I (A) C 500 Common emitter 0 25°C 400 300 200 100 0 2 2.5 0 1000 1000 100 100 10 1 500 600 0 100 7 MG600J2YS60A – 2000 3000 4000 5000 6000 Charge Q (nC – off off Common emitter 300 600 25° ± ...

Page 8

... Collector-emitter voltage V CE 100 10 1 0.1 500 600 0 C ies C oes C res 100 1000 ( 25°C 0.1 0.01 0.001 600 0.001 (V) 8 MG600J2YS60A E – I dsw F 200 400 600 Forward current I ( – Diode stage Transistor stage 0.01 0 Pulse width t (s) w 2002-09-06 ...

Page 9

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. MG600J2YS60A 9 000707EAA 2002-09-06 ...

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