TPC8216-H Toshiba Semiconductor, TPC8216-H Datasheet - Page 3

• Manufacturer Part Number: TPC8216-H
• Description: High-Efficiency DC/DC Converter Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source−Drain Ratings and Characteristics
Total gate charge
(gate-source plus gate-drain)
(Note 7)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
Q
Q
I
I
C
C
|Y
C
Q
GSS
DSS
V
Rg
t
t
Q
oss
on
off
gs1
SW
rss
t
t
iss
gd
th
fs
r
f
g
|
Symbol
V
I
DRP
DSF
V
V
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
Duty ≤ 1%, t
= 30 V, V
= 10 V, I
= 10 V , I
= 10 V, V
= 10 V, V
= ±20 V, V
= 4.5 V, I
= 10 V , I
≈ 24 V, V
≈ 24 V, V
≈ 24 V, V
V
GS
I
DR
10 V
0 V
3
= 6.4 A, V
D
GS
GS
D
GS
D
D
GS
GS
(Ta = 25°C)
GS
GS
GS
Test Condition
w
= 0.1 mA
DS
= 3.2 A
= 3.2 A
= 3.2 A
= 10
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 5 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
Test Condition
μ
GS
s
I
D
V
D
⎯
D
D
= 0 V
DD
= 6.4 A
= 3.2 A
= 6.4 A
= 6.4 A
≈ 15 V
出力
Min
Min
1.3
9.5
30
15
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Typ.
Typ.
16.5
13.6
900
200
2.5
2.3
7.0
9.2
7.6
2.4
2.5
3.4
19
65
28
14
⎯
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www.DataSheet4U.com
TPC8216-H
2009-02-23
±100
1170
Max
23.0
20.0
Max
25.6
−1.2
104
2.3
3.6
10
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Unit
Unit
mΩ
nC
nA
μA
pF
ns
Ω
V
V
S
A
V