TPCF8303 Toshiba Semiconductor, TPCF8303 Datasheet - Page 2

• Manufacturer Part Number: TPCF8303
• Description: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
• Manufacturer: Toshiba Semiconductor

Thermal Characteristics
Thermal resistance,
channel to ambient
(t
Thermal resistance,
channel to ambient
(t
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device
Note 4: V
Note 5: Repetitive rating; Pulse width limited by Max. Channel temperature.
Note 6: Black round marking “●” locates on the left lower side of parts number marking “F5C” indicates terminal
5 s)
5 s)
b) The power dissipation and thermal resistance values are shown for a single device
No. 1.
DD
(Note 2a) Single-device value at
(Note 2b) Single-device value at
(During single-device operation, power is only applied to one device.).
(During dual operation, power is evenly applied to both devices.).
Characteristics
-16 V, T
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
ch
25°C (initial), L
(Note 3a)
(Note 3a)
25.4
0.2 mH, R
R
R
R
R
FR-4
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
(Unit: mm)
Symbol
25.4
0.8
2
G
111.6
235.8
378.8
25 , I
Max
92.6
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
-1.5 A
(b)
25.4
FR-4
(Unit: mm)
25.4
TPCF8303
2003-07-16
0.8