TPCP8101 Toshiba Semiconductor, TPCP8101 Datasheet - Page 6

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TPCP8101

Manufacturer Part Number
TPCP8101
Description
Field Effect Transistor Silicon MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet
100
0.1
10
1
0.1
*: Single nonrepetitive pulse
1000
Curves must be derated
linearly with increase in
temperature.
I D max (pulse)*
Ta = 25°C
100
10
1
0.001
Safe operating area
1
10 ms*
0.01
Drain−sour
10
1 ms*
0.1
V DSS max
Pulse width t
Device mounted on a glass-
epoxy board (b) (Note 2b)
r
100
th(j−c)
6
1
− t
w
w
(s)
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
100
Single pulse
1000
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TPCP8101
2006-11-17

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