FSS13A0R1 Intersil Corporation, FSS13A0R1 Datasheet

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FSS13A0R1

Manufacturer Part Number
FSS13A0R1
Description
2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
Manufacturer
Intersil Corporation
Datasheet
2A, 100V, 0.170 Ohm, Rad Hard, SEGR
Resistant, N-Channel Power MOSFETs
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17696.
Ordering Information
10K
10K
100K
100K
100K
RAD LEVEL
SCREENING LEVEL
Commercial
Commercial
Space
TXV
TXV
TM
1
1-888-INTERSIL or 321-724-7143
Data Sheet
FSS13A0D1
FSS13A0D3
FSS13A0R1
FSS13A0R3
FSS13A0R4
PART NUMBER/BRAND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
|
Intersil and Design is a trademark of Intersil Corporation.
Features
• 12A, 100V, r
• Total Dose
• Single Event
• Dose Rate
• Photo Current
• Neutron
Symbol
Packaging
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
- 1.5nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications
- Usable to 3E14 Neutrons/cm
V
V
for 3E13 Neutrons/cm
DS
GS
up to 80% of Rated Breakdown and
of 10V Off-Bias
CAUTION: Beryllia Warning per MIL-S-19500
June 2000
DS(ON)
FSS13A0D, FSS13A0R
refer to package specifications.
G
= 0.170
TO-257AA
2
|
File Number
2
D
S
Copyright
S
D
©
G
Intersil Corporation 2000
2
with
DSS
DM
4487.3

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FSS13A0R1 Summary of contents

Page 1

... Formerly available as type TA17696. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSS13A0D1 10K TXV FSS13A0D3 100K Commercial FSS13A0R1 100K TXV FSS13A0R3 100K Space FSS13A0R4 1 1-888-INTERSIL or 321-724-7143 FSS13A0D, FSS13A0R June 2000 Features • 12A, 100V 0.170 DS(ON) • ...

Page 2

Absolute Maximum Ratings T C Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage V Reverse Recovery Time Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source ...

Page 4

Typical Performance Curves - CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE Q 12V CHARGE FIGURE ...

Page 5

Typical Performance Curves Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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