FSS234D1 Intersil Corporation, FSS234D1 Datasheet

FSS234D1

Manufacturer Part Number

FSS234D1

Description

6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

1.FSS234D1.pdf (8 pages)

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June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 6A, 250V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Ordering Information

Formerly available as type TA17638.

Package

10K

100K

RAD LEVEL

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 4.0nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 1E14 Neutrons/cm

for 1E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

600

PART NUMBER/BRAND

FSS234D1

FSS234D3

FSS234R1

FSS234R3

FSS234R4

Intersil Corporation 1999

CAUTION: Beryllia Warning per MIL-S-19500

FSS234D, FSS234R

with

SEGR Resistant, N-Channel Power MOSFETs

DSS

refer to package speciﬁcations.

TO-257AA

3-83

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs speciﬁ-

cally designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military

applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications exposed

to radiation environments such as switching regulation,

switching converters, motor drives, relay drivers and drivers

for high-power bipolar switching transistors requiring high

speed and low gate drive power. This type can be operated

directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

6A, 250V, 0.600 Ohm, Rad Hard,

File Number

4053.2

Related parts for FSS234D1

FSS234D1 Summary of contents

Page 1

... This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations PART NUMBER/BRAND from the data sheet. FSS234D1 FSS234D3 Symbol FSS234R1 FSS234R3 FSS234R4 TO-257AA ...

Page 2

Absolute Maximum Ratings Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Speciﬁcations PARAMETER SYMBOL Forward Voltage V SD Reverse Recovery Time t rr Electrical Speciﬁcations up to 100K RAD PARAMETER Drain to Source Breakdown Volts (Note 3) Gate to Source Threshold Volts (Note 3) Gate to Body ...

Page 4

Typical Performance Curves - CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE Q 12V CHARGE FIGURE 5. BASIC GATE ...

Page 5

Typical Performance Curves 0.001 Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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