FSS430R3 Intersil Corporation, FSS430R3 Datasheet

FSS430R3

Manufacturer Part Number

FSS430R3

Description

3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

1.FSS430R3.pdf (8 pages)

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June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 3A, 500V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Ordering Information

Formerly available as type

Package

10K

100K

RAD LEVEL

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 8.0nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 3E13 Neutrons/cm

for 3E12 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

= 2.70

TA17639

PART NUMBER/BRAND

FSS430D1

FSS430D3

FSS430R1

FSS430R3

FSS430R4

Intersil Corporation 1999

CAUTION: Beryllia Warning per MIL-S-19500

FSS430D, FSS430R

with

SEGR Resistant, N-Channel Power MOSFETs

DSS

refer to package speciﬁcations.

TO-257AA

3-89

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

3A, 500V, 2.70 Ohm, Rad Hard,

File Number

4060.2

Related parts for FSS430R3

FSS430R3 Summary of contents

Page 1

... MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations PART NUMBER/BRAND from the data sheet. FSS430D1 FSS430D3 Symbol FSS430R1 FSS430R3 FSS430R4 TO-257AA S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package speciﬁcations. © Intersil Corporation 1999 3-89 3A, 500V, 2 ...

Page 2

Absolute Maximum Ratings Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Speciﬁcations PARAMETER SYMBOL Forward Voltage V SD Reverse Recovery Time t rr Electrical Speciﬁcations up to 100K RAD PARAMETER Drain to Source Breakdown Volts (Note 3) Gate to Source Threshold Volts (Note 3) Gate to Body ...

Page 4

Typical Performance Curves 4.0 3.0 2.0 1 CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE Q 12V CHARGE FIGURE 5. BASIC GATE CHARGE ...

Page 5

Typical Performance Curves 10 1 0.1 0.01 Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

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