FSS9130D Intersil Corporation, FSS9130D Datasheet

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FSS9130D

Manufacturer Part Number
FSS9130D
Description
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Manufacturer
Intersil Corporation
Datasheet
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 6A, -100V, r
• Total Dose
• Single Event
• Dose Rate
• Photo Current
• Neutron
Ordering Information
Formerly available as type TA17736.
Package
10K
10K
100K
100K
100K
RAD LEVEL
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
- 1.5nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications
- Usable to 3E14 Neutrons/cm
V
V
for 3E13 Neutrons/cm
DS
GS
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS(ON)
Commercial
TXV
Commercial
TXV
Space
SCREENING LEVEL
= 0.660
2
|
Copyright
2
PART NUMBER/BRAND
FSS9130D1
FSS9130D3
FSS9130R1
FSS9130R3
FSS9130R4
©
Intersil Corporation 1999
CAUTION: Beryllia Warning per MIL-S-19500
2
with
SEGR Resistant, P-Channel Power MOSFETs
DSS
refer to package specifications.
DM
TO-257AA
3-197
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
S
D
6A, -100V, 0.660 Ohm, Rad Hard,
G
G
FSS9130D,
FSS9130R
D
S
File Number
4082.2

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FSS9130D Summary of contents

Page 1

... MIL-S-19500. Contact Intersil for any desired deviations PART NUMBER/BRAND from the data sheet. FSS9130D1 FSS9130D3 Symbol FSS9130R1 FSS9130R3 FSS9130R4 TO-257AA S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. © Intersil Corporation 1999 3-197 FSS9130D, FSS9130R File Number 4082.2 ...

Page 2

... -2V g(TH 6A -15V (PLATEAU -25V 0V, ISS 1MHz C OSS C RSS 3-198 FSS9130D, FSS9130R UNITS -100 V DS -100 V DGR 0. ...

Page 3

... FLUENCE = 1E5 IONS/cm (TYPICAL) -100 -80 -60 -40 -20 o TEMP = (V) GS FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FSS9130D, FSS9130R TEST CONDITIONS 6A, dI /dt = 100A Unless Otherwise Specified C SYMBOL TEST CONDITIONS 1mA ...

Page 4

... G CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE FSS9130D, FSS9130R Unless Otherwise Specified (Continued) 100 OPERATION IN THIS AREA MAY BE LIMITED BY r 0.1 100 150 - FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2 ...

Page 5

... TO OBTAIN P 50 REQUIRED PEAK 20V GS FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT -12V FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FSS9130D, FSS9130R Unless Otherwise Specified (Continued) STARTING STARTING T = 150 (L) (IAS) / (1.3 RATED DSS (L/R) ln [(IAS* ...

Page 6

... Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching Thermal Response Thermal Impedance FSS9130D, FSS9130R SYMBOL TEST CONDITIONS 20V GSS GS I ...

Page 7

... Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report FSS9130D, FSS9130R E. Preconditioning Attributes Data Sheet F. Group A G. Group B H. Group C I. Group D 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certifi ...

Page 8

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 FSS9130D, FSS9130R SYMBOL MIN A 0.190 A ...

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