FSS923A0D1 Intersil Corporation, FSS923A0D1 Datasheet

FSS923A0D1

Manufacturer Part Number

FSS923A0D1

Description

7A/ -200V/ 0.650 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

1.FSS923A0D1.pdf (8 pages)

Current page: 1 of 8
Download datasheet (57Kb)

7A, -200V, 0.650 Ohm, Rad Hard, SEGR

Resistant, P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

Formerly available as type TA17797.

10K

100K

RAD LEVEL

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL PART NUMBER/BRAND

4-1

Data Sheet

FSS923A0D1

FSS923A0D3

FSS923A0R1

FSS923A0R3

FSS923A0R4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 7A, -200V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Symbol

Package

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 3.0nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 1E14 Neutrons/cm

for 1E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

CAUTION: Beryllia Warning per MIL-S-19500

FSS923A0D, FSS923A0R

June 1999

DS(ON)

refer to package speciﬁcations.

= 0.650

TO-257AA

File Number 4475.2

Intersil Corporation 1999

with

DSS

Related parts for FSS923A0D1

FSS923A0D1 Summary of contents

Page 1

... Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSS923A0D1 10K TXV FSS923A0D3 100K Commercial FSS923A0R1 100K TXV ...

Page 2

Absolute Maximum Ratings T C Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Speciﬁcations PARAMETER SYMBOL Forward Voltage Reverse Recovery Time Electrical Speciﬁcations up to 100K RAD PARAMETER Drain to Source Breakdown Volts (Note 3) Gate to Source Threshold Volts (Note 3) Gate-Body Leakage (Notes 2, 3) Zero-Gate Leakage ...

Page 4

Typical Performance Curves - CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE Q -12V CHARGE BASIC GATE CHARGE WAVEFORM ...

Page 5

Typical Performance Curves Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V GS FIGURE 9. ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current On Resistance Gate ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Related keywords

FSS923A0D1 datasheet
FSS923A0D1 data sheet
FSS923A0D1 pdf datasheet
FSS923A0D1 component
FSS923A0D1 part
FSS923A0D1 distributor
FSS923A0D1 RoHS
FSS923A0D1 datasheet download