MP4T645 M-pulse Microwave, MP4T645 Datasheet

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MP4T645

Manufacturer Part Number
MP4T645
Description
Silicon Bipolar High fT Low Noise Microwave Transistors
Manufacturer
M-pulse Microwave
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MP4T645
Manufacturer:
M-PulseMi
Quantity:
5 000
Part Number:
MP4T64500
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Part Number:
MP4T64533
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Part Number:
MP4T64535
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Part Number:
MP4T64539
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
www.DataSheet4U.com
Features
Description
The MP4T645 family of high gain-bandwidth, small
signal silicon bipolar transistors is well suited for use in
amplifiers to approximately 4 GHz, and in oscillators to
approximately 10 GHz. These industry standard transis-
tors freature low noise figure at high collector current,
which produces v ery good associated gain and wide
dynamic range.
av ailable
(MP4T64535),
(MP4T64533), in chip form (MP4T64500), and in the
SOT-143 package (MP4T64539). The MP4T645 series
is av ailable in other plastic and hermetic packages as
well. The chip and hermetically packaged transistors
can be screened to a JANTXV equiv alent lev el.
Applications
The MP4T645 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 4 GHz.
transistors can also be used as preamplifier or driv er
stages in the same frequency range.
The MP4T645 family of bipolar NPN transistors can also
be used for oscillators or VCOs up to approximately 10
GHz.
commonly known as thermal oxide, and silicon nitride to
produce v ery low 1/f noise in both amplifiers and
oscillators.
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Silicon Bipolar High f
Microwave Transistors
f
Low Noise Figure
High Associated Gain
Hermetic and Surface Mount Packages Av ailable
Can be Screened to JANTX, JANTXV Equiv alent Lev els
Industry Standard
T
to 9 GHz
The passiv ation consists of silicon dioxide,
in
in
Specification Subject to Change Without Notice
a
The MP4T645 series transistors are
the
hermetic
plastic
Fax (408)) 432-3440
microstrip
SOT-23
T
Low Noise
package
package
These
Case Styles
SOT-23
Micro-X
Chip
MP4T645
SOT-143
1

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MP4T645 Summary of contents

Page 1

... GHz. transistors can also be used as preamplifier or driv er stages in the same frequency range. The MP4T645 family of bipolar NPN transistors can also be used for oscillators or VCOs up to approximately 10 GHz. The passiv ation consists of silicon dioxide, ...

Page 2

... Compression GHz GHz Note: The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23). Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 V ...

Page 3

... MP4T645 Series Min Typical Max 100 1 30 125 250 0.3 0.6 S 12E Mag. Angle 0.052 43.6 0.063 39.0 0.072 40.0 0.082 42.5 0.092 44.0 0.103 45.2 0.118 45.5 0.130 45.7 0.143 45.5 ...

Page 4

... MP4T645 Series S 12E Mag. Angle Mag 0.033 49.8 0.390 0.046 55.7 0.284 0.062 57.7 0.270 0.077 59.3 0.237 0.093 58.0 0.226 0.108 56.5 0.243 0.126 54 ...

Page 5

... Micro-X Package 100 125 150 175 5 10 MP4T645 Series NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE (MP4T64535) 0.6 0.55 0.5 0.45 0.4 0.35 0.3 0.25 0 COLLECTOR-BASE VOLTAGE (V ) (Volts) CB NOMINAL GAIN vs COLLECTOR CURRENT 1.5 GHz Volts (MP4T64535 MAG 10 GTU (MAX 21E COLLECTOR CURRENT (mA) 100 100 5 ...

Page 6

... Typical Performance Curves (Cont’ d) NOMINAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (MP4T64535 COLLECTOR CURRENT (mA) NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs FREQUENCY at V COLLECTOR CURRENT = 7 mA (MP4T64535) 100 ASSOCIATED GAIN 10 NOISE FIGURE www.DataSheet4U.com 1 0.1 1 FREQUENCY (GHz) Specification Subject to Change Without Notice ...

Page 7

... Silicon Bipolar High f T Low Noise Microwave Transistors Typical Performance Curves (Cont’ d) NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT and 4 GHz VOLTS (MP4T64535 GHz 1dB COLLECTOR CURRENT (mA) ...

Page 8

... Silicon Bipolar High f Low Noise Microwave Transistors T Case Styles (Cont’ d) MP4T64535 Micro-X Emitter F 4 PLCS Collector Base B Emitter MP4T64500 Case Style 00 (Chip) E BASE C B EMITTER D A www.DataSheet4U.com MP4T64539 Case Style SOT-143 Base ...

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