mp4t6365 M-Pulse Microwave, mp4t6365 Datasheet

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mp4t6365

Manufacturer Part Number
mp4t6365
Description
Low Operatingvoltage, High Ft Bipolar Microwave Transistors
Manufacturer
M-Pulse Microwave
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MP4T6365
Manufacturer:
M-PulseMi
Quantity:
5 000
Part Number:
mp4t636500
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Part Number:
mp4t636533
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Part Number:
mp4t636535
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Part Number:
mp4t636539
Manufacturer:
M-PulseMicrowave
Quantity:
5 000
Features
Description
The MP4T6365 family of low v oltage, high gain band-
width silicon NPN bipolar transistors prov ides low noise
figure and high gain at low bias v oltages. These transis-
tors are especially attractiv e for low operating v oltage
low noise amplifiers or driv er amplifiers at frequencies
to 4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
The MP4T6365 family was designed to hav e low noise
figure at operating v oltages as low as 3 v olts. These
transistors also exhibit low phase noise in VCOs
operating at 5 v olts or less.
Because this transistor family was specifically designed
to perate from low bias v oltage, it has superior phase
noise in comparison to similar current bipolar transistors
with higher collector breakdown v oltage when operating
under the same low v oltage conditions.
The MP4T6365 series transistors are av ailable in
hermetic Micro-X packages, the SOT-23, the SOT-143,
and in chip form (MP4T636500). Other stripline and
hermetic packages are av ailable.
hermetic packages can be screened to JANTX, JANTXV
equiv alent lev els. The plastic parts can be supplied on
tape and reel.
All of M-Pulse’ s silicon bipolar transistor families use
silicon dioxide and silicon nitride passiv ation to assure
low 1/F noise for amplifier and oscillator applications.
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Low OperatingVoltage, High f
Bipolar Microwave Transistors
Designed for Battery Operation
f
Low Voltage Oscillator and Amplifier
Low Phase Noise and Noise Figure
Hermetic and Surface Mount Packages and
Chips Av ailable
Can be Screened to JANTX, JANTXV Equiv alent Lev els
T
to 10 GHz
Specification Subject to Change Without Notice
Fax (408)) 432-3440
The chip and
T
Case Styles
SOT-23
Micro-X
Chip
MP4T6365
SOT-143
V2.00
1

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mp4t6365 Summary of contents

Page 1

... Chips Av ailable Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain band- width silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transis- tors are especially attractiv e for low operating v oltage low noise amplifiers or driv er amplifiers at frequencies to 4 GHz ...

Page 2

... Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Power Dissipation Package Type Chip (MP4T636500) SOT-23 (MP4T636533) Micro-X Package (MP4T636535) SOT-143 (MP4T636539) Electrical Specifications @ 25 C MP4T6365 Series Parameter of Test Condition Gain Bandwidth Product ...

Page 3

... MP4T6365 Series Min Typical Max 100 200 0.50 0.70 S 12E Mag. Angle 0.103 38.7 0.123 29.0 0.135 27.7 0.146 26.8 0.159 27.3 0.174 27.3 0.190 26.8 0.205 25.6 0.218 24.1 0.238 22 ...

Page 4

... MP4T6365 Series S 12E Mag. Angle Mag 0.048 46.7 0.321 0.071 52.5 0.238 0.094 54.2 0.217 0.117 53.2 0.223 0.144 52.0 0.214 0.169 49.2 0.232 0.194 45.9 0.242 0.219 42.1 0.256 0.238 38.3 0.274 ...

Page 5

... MP4T6365 Series NOMINAL COLLECTOR-BASE CAPACITANCE (C vs COLLECTOR-BASE VOLTAGE (MP4T636535) 1.1 1 0.9 0.8 0.7 0.6 0.5 0 COLLECTOR-BASE VOLTAGE (Volts) NOMINAL GAIN vs COLLECTOR CURRENT 1.0 GHz Volts (MP4T636535 MAG GTU (MAX 21E COLLECTOR CURRENT (mA) V2. ...

Page 6

... COLLECTOR CURRENT (mA) NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs FREQUENCY at V COLLECTOR CURRENT = 5 mA (MP4T636535) 100 10 ASSOCIATED GAIN NOISE FIGURE 2 1 0.1 1 COLLECTOR CURRENT (mA) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 ...

Page 7

... Low Operating Voltage, High f T Bipolar Microwave Transistors Typical Performance Curves (Cont’ d) NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT and 4 GHz VOLTS (MP4T636535 GHz COLLECTOR CURRENT (mA) Case Styles SOT-23 ...

Page 8

... MP4T636500 B (Dia.) 2 plcs. F (chip thickness) MP4T636539 DIM DIM NOTE: 1. Applicable on all sides MP4T6365 Series INCHES MILLIMETERS MIN. MAX. MIN. 0.092 0.108 2.34 0.079 0.087 2.01 0.070 0.019 0.025 0.48 0.018 0.022 0.46 0.150 3.81 0.003 0.006 0.08 45 DIM. INCHES ...

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