DS1610 Dallas Semiconducotr, DS1610 Datasheet

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DS1610

Manufacturer Part Number
DS1610
Description
Partitioned NV Controller
Manufacturer
Dallas Semiconducotr
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1610S
Manufacturer:
MAXIM/美信
Quantity:
20 000
FEATURES
DESCRIPTION
The DS1610 is a low-power CMOS circuit which solves the application problems of converting CMOS
RAMS into nonvolatile memories. In addition the device has the ability to unconditionally write protect
blocks of memory so that inadvertent write cycles do not corrupt program and special data space. The
power supply incoming voltage at the V
condition. When such a condition is detected, both the chip enable and write enable outputs are inhibited
to protect stored data. The battery inputs are used to supply V
battery input voltages. Special circuitry uses a low leakage CMOS process which affords precise voltage
detection at extremely low current consumption. By combining the DS1610 Partitioned NV Controller
chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved.
The DS1610 Partitioned NV Controller functions like the Dallas Semiconductor DS1210 NV controller
when the (
DS1610S allows it to retrofit into DS1210S applications. When the
inputs A
enable output
www.dalsemi.com
Converts CMOS RAMs into nonvolatile
memories
SOIC version is pin-compatible with the
Dallas Semiconductor DS1210 NV Controller
Unconditionally write protects all of memory
when V
Write protects selected blocks of memory
regardless of V
Automatically switches to battery backup
supply when power-fail occurs
Provides for multiple batteries
Consumes less than 100 nA of battery current
Test battery on power-up by inhibiting the
second memory cycle
Optional 5% or 10% power-fail detection
16-pin DIP or 16-pin SOIC surface-mount
package
Low forward voltage drop on the V
with currents of up to 150 mA
Optional industrial temperature range of
-40°C to +85°C
W
- A
DIS
CC
Z
is out of tolerance
WEO
) disable pin is grounded. An internal pulldown resistor to ground on the
and the write enable input
CC
are tristated.
status when programmed
CC
switch
CCI
WEI
input pin is constantly monitored for an out-of-tolerance
are ignored. Also the power-fail output
1 of 10
PIN ASSIGNMENT
PIN DESCRIPTION
V
V
V
V
GND
TOL
A
CEI
CEO
WEI
WEO
DIS
PFO
CCI
BAT1
BAT2
CCO
W
- A
Partitioned NV Controller
CCO
Z
V
GND
V
16-Pin DIP and 16-Pin SOIC
TOL
DIS
BAT1
CCO
A
A
A
W
X
Y
with power when V
- Input +5 Volt Supply
- + Battery 1 Input
- + Battery 2 Input
- RAM Power (V
- Ground
- Chip Enable Input
- Chip Enable Output
- Write Enable Input
- Write Enable Output
- Power Supply Tolerance Select
- Address Inputs
- Memory Partition Disable
- Power-Fail Output
DIS
1
2
3
4
5
6
7
8
pin is grounded the address
16
15
14
13
12
10
11
9
CCI
PFO
V
A
V
WEO
CEO
CEI
WEI
PFO
CC
CCI
Z
BAT2
) Supply
is less than the
DIS
DS1610
and the write
pin of the
111999

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DS1610 Summary of contents

Page 1

... DESCRIPTION The DS1610 is a low-power CMOS circuit which solves the application problems of converting CMOS RAMS into nonvolatile memories. In addition the device has the ability to unconditionally write protect blocks of memory so that inadvertent write cycles do not corrupt program and special data space. The power supply incoming voltage at the V condition ...

Page 2

... The DS1610 performs five circuit functions required to battery backup a RAM. First, a switch is provided to direct power from the battery or the incoming power supply (V switch has a voltage drop of less than 0.2 volts. The second function provided by the DS1610 is power- fail detection. The incoming supply (V ...

Page 3

... A logical bit location disables write protection. For example, if during the pattern match sequence bit 22 on address pin A partition register location for partition set This in turn would cause the DS1610 to inhibit from going low as ...

Page 4

... CCTP V 4.25 4.37 CCTP 50k DIS I -1 SYMBOL MIN TYP V V -0.2 OHL BAT V V -0.2 OHL BAT I BAT I CCO2 DS1610 (0°C to 70°C) MAX UNITS NOTES MAX UNITS NOTES 200 µ 150 ...

Page 5

... TOL= GND) = 4.50V to 5.50V, TOL-V CCI MAX UNITS NOTES (0°C to 70°C; V <4.5V) CC MAX UNITS NOTES 125 ms µs µs µs 1.5 µs 1.5 µs DS1610 ) CCO 10 10 ...

Page 6

... TIMING DIAGRAM: POWER-UP TIMING DIAGRAM: POWER-DOWN DS1610 ...

Page 7

... TIMING DIAGRAM: LOADING PARTITION REGISTER OUTPUT LOAD Figure DS1610 ...

Page 8

... forced through the maximum average load current which the DS1610 can supply to the memories in the CC02 battery backup mode max must be met to insure data integrity on power loss ...

Page 9

... DS1610 16-PIN DIP (300-MIL) PKG 16-PIN DIM MIN MAX A IN. 0.740 0.780 MM 18.80 19.81 B IN. 0.240 0.260 MM 6.10 6.60 C IN. 0.120 0.140 MM 3.05 3.56 D IN. 0.300 0.325 MM 7.62 8.26 0.015 0.040 E IN. MM 0.38 1.02 F IN. 0.120 0.140 MM 3.04 3.56 G IN. 0.090 0.110 MM 2.29 2.79 H IN. 0.320 0.370 MM 8.13 9.40 J IN. 0.008 0.012 MM 0.20 0.30 K IN. 0.015 0.021 MM 0.38 0. ...

Page 10

... DS1610 16-PIN SOIC (300-MIL) PKG 16-PIN DIM MIN MAX A IN. 0.402 0.412 MM 10.21 10.46 B IN. 0.290 0.300 MM 7.37 7.65 C IN. 0.089 0.095 MM 2.26 2.41 E IN. 0.004 0.012 MM 0.102 0.30 F IN. 0.094 0.105 MM 2.38 2.68 G IN. .050 BSC MM 1.27 BSC H IN. 0.398 0.416 MM 10.11 10.57 J IN. 0.009 0.013 MM 0.229 0.33 0.013 0.019 K IN. MM 0.33 0.48 L IN. ...

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