DS2016 Dallas Semiconducotr, DS2016 Datasheet

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DS2016

Manufacturer Part Number
DS2016
Description
2k x 8 3V/5V Operation Static RAM
Manufacturer
Dallas Semiconducotr
Datasheet

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Part Number:
DS2016
Manufacturer:
DALLAS
Quantity:
35
Part Number:
DS2016
Manufacturer:
DS
Quantity:
20 000
Company:
Part Number:
DS2016
Quantity:
210
Part Number:
DS20163
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DALLAS
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Part Number:
DS2016R-100
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MAXIM/美信
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20 000
Part Number:
DS2016S
Manufacturer:
MAXIM/美信
Quantity:
20 000
Part Number:
DS2016S-100
Manufacturer:
DALLAS
Quantity:
8 000
FEATURES
§ Low-power CMOS design
§ Standby current
§ Full operation for V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
§ Reduced-speed 3V access time
§ Operating temperature range of -40°C to
§ Full static operation
§ TTL compatible inputs and outputs over
§ Available in 24-pin DIP and 24-pin SOIC
§ Suitable for both battery operated and battery
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.
www.dalsemi.com
+85°C
voltage range of 5.5V to 2.7 volts.
packages
backup applications
50 nA max at t
100 nA max at t
1 µA max at t
DS2016 - 100
DS2016 - 150
DS2016 - 100
DS2016 - 150
A
A
= 60°C V
A
CC
= 25°C V
= 25°C V
100 ns
150 ns
250 ns
250 ns
= 5.5V to 2.7V
CC
CC
CC
= 5.5V
= 3.0V
= 5.5V
2k x 8 3V/5V Operation Static RAM
1 of 9
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A10
DQ0 - DQ7
V
GND
CE
OE
WE
CC
GND
DQ1
DQ2
DQ0
A7
A6
A5
A4
A3
A2
A1
A0
DS2016R 24-Pin SOIC (300-mil)
DS2016 24-Pin DIP (600-mil)
1
10
11
12
2
3
4
5
6
7
8
9
- Address Inputs
- Data Input/Output
- Chip Enable Input
- Write Enable Input
- Output Enable Input
- Power Supply Input 2.7V - 5.5V
- Ground
24
23
22
21
20
19
18
17
16
15
14
13
V
DQ5
DQ4
DQ3
CE
A8
A9
WE
OE
A10
CE
DQ7
DQ6
CC
DS2016
) is used for
092399

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DS2016 Summary of contents

Page 1

... The device maintains TTL-level inputs and outputs over the input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard SRAM and is pin-compatible with ROM and EPROM of similar density. ...

Page 2

... TYP MAX UNITS -40°C to +85°C) A TYP MAX UNITS 5 0 MIN TYP MAX 0.1 0 -1.0 4.0 0.3 1 100 55 DS2016 POWER I CCO I CCO I CCO I CCS (T = 25°C) A NOTES NOTES 10%) UNITS µA µ µ ...

Page 3

... DS2016-150 UNITS 150 ns 150 150 -40°C to +85° 10%) CC DS2016-150 UNITS 150 ns 120 -40°C to +85°C) A MIN TYP MAX 2.0 5.5 0.1* 1 50* 750 0 2 DS2016 10%) NOTES NOTES UNITS V µA nA µs ms ...

Page 4

... -40°C to +85°C) A TYP MAX UNITS 3 0 2.7V to 3.5V) CC MIN TYP MAX ±0.1 ±0 -0.5 4.0 0.1 500 2.7V to 3.5V) CC TYP MAX UNITS ns 250 ns 120 ns 250 ns ns 100 ns ns DS2016 NOTES UNITS µA µ NOTES ...

Page 5

... WR t ODW t 5 OEW t 100 CONDITIONS 0.3V CE CCR1 0.3V CE CCR2 CC CDR 2.7V to 3.5V) CC TYP MAX UNITS -40°C to +85°C) A MIN TYP MAX 2.0 3.5 50* 1000 50* 750 0 2 DS2016 NOTES UNITS µs ms ...

Page 6

... TIMING DIAGRAM: WRITE CYCLE 1 SEE NOTES AND 7 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES AND DS2016 ...

Page 7

... I current flows. CCS1 9. The DS2016 maintains full operation from 5.5V to 2.7V. The electrical characteristics tables show two tested and guaranteed points of operation. For operation between 4.5V and 3.5 volts, use the composite worst case characteristics from both 5V and 3V operation for design purposes. DC TEST CONDITIONS Outputs Open All voltages are referenced to ground ...

Page 8

... DS2016 24-PIN DIP PKG 24-PIN DIM MIN A IN. 1.245 MM 31.62 0.530 B IN. 13. IN. 0.140 MM 3.56 0.600 D IN. MM 15.24 E IN. 0.015 0.380 MM F IN. 0.120 MM 3.05 0.090 G IN. 2. IN. 0.625 MM 15.88 0.008 J IN. 0. IN. 0.015 MM 0. DS2016 MAX 1.270 32.25 0.550 13.97 0.160 4.06 0.625 15.88 0.050 1.27 0.145 3.68 0.110 2.79 0.675 17.15 0.012 ...

Page 9

... DS2016S 24-PIN SOIC The chamfer on the body is optional not present, a terminal 1 identifier must be positioned so that ½ or more of its area is contained in the hatched zone. PKG 24-PIN DIM MIN A IN. 0.094 MM 2.38 0.004 A1 IN. MM 0.102 b IN. 0.013 0.33 MM 0.009 C IN. MM 0.229 D IN. 0.598 15. IN. ...

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