SGM2013 Sony Corporation, SGM2013 Datasheet - Page 3

• Manufacturer Part Number: SGM2013
• Description: GaAs N-channel Dual-Gate MES FET
• Manufacturer: Sony Corporation

10
8
6
4
2
0
5
4
3
2
1
0
5
4
3
2
1
0
–2.0
–1.0
0
(V
(V
(V
DS
DS
DS
1
–0.8
= 2V)
= 2V, V
= 2V, V
V
V
G2S
G1S
2
–1.5
– Gate 2 to source voltage [V]
– Gate 1 to source voltage [V]
3
I
G2S
G2S
D
–0.6
NF, Ga vs. V
– Drain current [mA]
NF, Ga vs. I
4
= 0.5V, f = 900MHz)
= 0.5V, f = 900MHz)
I
D
vs. V
5
–1.0
–0.4
6
Ga
NF
Ga
NF
G2S
G1S
–0.2
7
D
–0.5
8
9
0
10
0.2
11
0
–0.2V
–0.4V
–0.8V
–1.0V
20
15
5
0
20
15
5
0
V
= 0V
–0.6V
25
10
25
10
G1S
– 3 –
3.0
2.5
2.0
1.5
1.0
0.5
25
20
15
10
5
0
5
4
3
2
1
0
0
–2.0
0
0
(V
DS
0.2
= 2V)
0.4
(V
V
V
1
DS
G1S
DS
–1.5
0.6
– Drain to source voltage [V]
= 2V, V
– Gate 1 source voltage [V]
Ga
NFmin
f – Frequency [GHz]
NF, Ga vs. V
0.8
gm vs. V
2
NF, Ga vs. f
G2S
1.0
–1.0
= 0.5V, I
1.2
3
G1S
1.4
DS
Ga
NF
D
1.6
–0.5
4
= 2mA)
1.8
2.0
5
SGM2013N
2.2
0
0.25V
0V
–0.5V
V
= 0.5V
–0.25V
–0.75V
25
20
15
10
5
0
30
25
20
15
10
5
0
G2S