BF246C Philips Semiconductors, BF246C Datasheet - Page 2

• Manufacturer Part Number: BF246C
• Description: N-channel silicon junction field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
QUICK REFERENCE DATA
1996 Jul 29
V
V
I
P
C
T
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
DSS
y
Interchangeability of drain and source connections
High I
Frequency up to 450 MHz.
VHF and UHF amplifiers
Mixers
General purpose switching.
j
DS
GSoff
tot
N-channel silicon junction
field-effect transistors
rs
SYMBOL
fs
DSS
range
drain-source voltage
gate-source cut-off voltage
drain current
total power dissipation
forward transfer admittance
reverse transfer capacitance
operating junction temperature
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
CAUTION
PARAMETER
I
V
up to T
I
f = 1 kHz
I
f = 1 MHz
D
D
D
DS
= 10 nA; V
= 10 mA; V
= 10 mA; V
= 15 V; V
amb
CONDITIONS
2
= 50 C
PINNING
handbook, halfpage
BF246A; BF246B; BF246C
BF247A; BF247B; BF247C
DS
DS
DS
GS
PIN
= 15 V
1
2
3
1
2
3
= 15 V;
= 15 V;
= 0
Fig.1
BF246A; BF246B; BF246C;
1
BF247A; BF247B; BF247C
2
3
SYMBOL
Simplified outline (TO-92 variant)
and symbol.
d
g
s
d
s
g
30
60
110
8
0.6
MIN.
drain
gate
source
drain
source
gate
3.5
TYP.
DESCRIPTION
Product specification
MAM257
80
140
250
400
150
g
MAX.
25
14.5
V
V
mA
mA
mA
mW
mS
pF
C
UNIT
d
s