BF246C Philips Semiconductors, BF246C Datasheet - Page 3

• Manufacturer Part Number: BF246C
• Description: N-channel silicon junction field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
Note
1. Measured under pulse conditions: t
DYNAMIC CHARACTERISTICS
T
1996 Jul 29
V
I
P
T
T
R
V
V
V
I
I
C
C
C
f
SYMBOL
SYMBOL
SYMBOL
SYMBOL
amb
amb
G
DSS
GSS
gfs
y
stg
j
DS
tot
(BR)GSS
GSoff
GS
N-channel silicon junction
field-effect transistors
th j-a
is
rs
os
fs
= 25 C; unless otherwise specified.
= 25 C; unless otherwise specified.
drain-source voltage
gate current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
gate-source breakdown voltage
gate-source cut-off voltage
gate-source voltage
drain current
gate leakage current
input capacitance
reverse transfer capacitance
output capacitance
forward transfer admittance
cut-off frequency
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
PARAMETER
PARAMETER
PARAMETER
PARAMETER
p
= 300 s;
I
I
I
V
V
I
I
I
I
g
G
D
D
D
D
D
D
fs
GS
GS
= 1 A; V
= 10 nA; V
= 200 A; V
= 10 mA; f = 1 MHz; V
= 10 mA; f = 1 MHz; V
= 10 mA; f = 1 MHz; V
= 10 mA; f = 1 kHz; V
= 0.7 of its value at 1 kHz; V
= 0; V
= 15 V; V
0.02.
CONDITIONS
3
DS
up to T
in free air
CONDITIONS
DS
DS
= 15 V; note 1
DS
DS
= 15 V
= 0
= 15 V
CONDITIONS
amb
CONDITIONS
= 0
= 50 C
DS
DS
DS
DS
BF246A; BF246B; BF246C;
= 15 V
BF247A; BF247B; BF247C
= 15 V
= 15 V
= 15 V
30
60
110
GS
25
0.6
1.5
3.0
5.5
MIN.
= 0
8
MIN.
65
MIN.
TYP.
VALUE
250
11
3.5
5
17
450
TYP.
Product specification
10
400
+150
150
80
140
250
25
14.5
4.0
7.0
12.0
5
MAX.
MAX.
MAX. UNIT
UNIT
K/W
V
mA
mW
V
V
V
V
V
mA
mA
mA
nA
C
C
UNIT
UNIT
pF
pF
pF
mS
MHz