SSM3J16FV Toshiba Semiconductor, SSM3J16FV Datasheet - Page 4

• Manufacturer Part Number: SSM3J16FV
• Description: Field-Effect Transistor Silicon P-Channel MOS Type
• Manufacturer: Toshiba Semiconductor

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1000
500
300
100
200
100
250
200
150
100
50
30
10
10
50
5
3
1
1
-0.1
-1
0
0
20
Drain - Source voltage VDS (V)
40
Drain current ID (mA)
周囲温度 Ta (°C)
-10
-1
60
⎪Y
P
c – V
D
fs
⎪ – I
– Ta
80
Mounted on FR4 board
(25.4mmX25.4mmX1.6t
CU Pad:0.6mm2X3
DS
D
100
-100
Common Source
V DS =−3 V
Ta = 25°C
-10
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
120
C rss
C oss
C iss
140
-1000
-100
160
4
10000
5000
3000
1000
-250
-200
-150
-100
500
300
100
-50
50
30
10
-0.1
0
0
G
Common Source
V GS = 0 V
Ta = 25°C
t off
t f
0.2
t on
t r
Drain - Source VDS (V)
D
S
0.4
Drain current I
-1
I DR
I
DR
0.6
t – I
– V
D
0.8
DS
D
Common Source
V DD = -3 V
V GS = 0~-2.5 V
Ta = 25°C
(mA)
-10
1
SSM3J16FV
1.2
2007-11-01
-100
1.4