SSM3K02T Toshiba Semiconductor, SSM3K02T Datasheet

SSM3K02T

Manufacturer Part Number

SSM3K02T

Description

High Speed Switching Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM3K02T.pdf (5 pages)

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Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM3K02T

Manufacturer:

TOSHBI

Quantity:

20 000

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w w w . D a t a S h e e t 4 U . c o m

High Speed Switching Applications

•

Absolute Maximum Ratings

Marking

Handling Precaution

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

Small package

Low on resistance : R

Low gate threshold voltage: V

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature

Storage temperature range

Note:

Note 1: Mounted on FR4 board

Note 2: The pulse width limited by max channel temperature.

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm

Characteristics

K U

: R

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Pulse

= 200 mΩ (max) (V

= 250 mΩ (max) (V

= 0.6~1.1 V (V

(Ta = 25°C)

(Note 1)

Symbol

SSM3K02T

GSS

stg

= 4 V)

= 2.5 V)

= 3 V, I

−55~150

Rating

1250

±10

150

2.5

5.0

, t = 10 s)

Equivalent Circuit

= 0.1 mA)

Unit

°C

Weight: 0.01 g (typ.)

JEDEC

JEITA

TOSHIBA

SSM3K02T

2-3S1A

2007-11-01

―

Unit: mm

Related parts for SSM3K02T

SSM3K02T Summary of contents

Page 1

... (Ta = 25°C) Symbol Rating ±10 V GSS DC I 2.5 D Pulse I 5 1250 (Note 1) T 150 ch −55~150 T stg Equivalent Circuit 1 SSM3K02T = 0.1 mA) Unit JEDEC °C °C JEITA TOSHIBA 2-3S1A Weight: 0.01 g (typ Unit: mm ― ― 2007-11-01 ...

Page 2

... 0 0~2 4.7 Ω off requires higher voltage than V GS (ON) < V < (off (ON) 2 SSM3K02T Min Typ. Max Unit ⎯ ⎯ ±5 μA ⎯ ⎯ ⎯ ⎯ μA 1 ⎯ 0.6 1.1 V ⎯ ⎯ (Note) 2.2 S ⎯ ...

Page 3

... VGS = 1 1.5 2 (V) DS – (ON) D Common Source Ta = 25°C 1.5 2.0 2.5 ( – 0 ( SSM3K02T I – 10000 Common Source VDS = 3 V 1000 100 25° 100°C 1 −25°C 0.1 0.01 0 0.5 1 1.5 Gate-Source voltage V ( – (ON) 400 Common Source ID=1 ...

Page 4

... DS r – Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 0 Pulse width tw (s) 4 SSM3K02T P – 1.5 1.5 Mounted on FR4 board Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, (25.4 mm × 25.4 mm × 1 Pad: 645 mm Cu Pad: 645 mm ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K02T 20070701-EN GENERAL 2007-11-01 ...

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