SSM3K03TE Toshiba Semiconductor, SSM3K03TE Datasheet - Page 2

• Manufacturer Part Number: SSM3K03TE
• Description: High Speed Switching Applications
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Switching Time Test Circuit
(a)
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Test circuit
Characteristics
Turn-on time
Turn-off time
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
⎪
V
I
V
V
V
I
V
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
DD
= 100 μA, V
= 10 mA, V
= 10 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, I
= 3 V, I
2
(b)
(c)
D
D
D
D
Test Condition
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
= 10 mA, V
= 10 mA, V
DS
GS
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
V
V
V
V
= 2.5 V
= 0
= 0
= 0
IN
GS
OUT
DS
GS
GS
= 0~2.5 V
= 0~2.5 V
Min
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
11.0
0.16
0.19
3.3
9.3
50
⎯
⎯
⎯
⎯
4
SSM3K03TE
2007-11-01
Max
1.3
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
Unit
mS
μA
μA
pF
pF
pF
μs
Ω
V
V