SSM3K16FU Toshiba Semiconductor, SSM3K16FU Datasheet
SSM3K16FU
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SSM3K16FU Summary of contents
Page 1
... SSM3K16FU = 2 1 Symbol Rating Unit ± GSS I 100 200 DP P (Note) 150 mW D °C T 150 ch -55~150 °C T stg 2 ´ 3) Equivalent Circuit SSM3K16FU Unit: mm JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E 2001-12-18 ...
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... 0~2 off ( OUT R L (c) V OUT V DD requires higher voltage than V GS (on) GS (off) recommended voltage of 1 higher to turn SSM3K16FU Min Typ. Max ¾ ¾ ±1 ¾ ¾ 20 ¾ ¾ 1 ¾ 0.6 1.1 ¾ ¾ 40 ¾ 1.5 3.0 ¾ 2.2 4.0 ¾ ...
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... Gate-Source voltage V GS (V) 2 Common source 0 1.6 1.2 0.8 0.4 0 -25 125 150 0 Ambient temperature Ta (°C) 3 SSM3K16FU I – -25° – (ON) GS Common source 100°C 25°C -25° – ...
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... Drain-Source voltage V DS (V) 5000 3000 t off 1000 500 t f 300 100 100 10 0.1 160 4 SSM3K16FU I – -0.4 -0.6 -0.8 -1 -1.2 -1.4 t – Common source 0~2 25° 100 Drain current I D (mA) 2001-12-18 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 SSM3K16FU 000707EAA 2001-12-18 ...