CPH6415 Sanyo Semicon Device, CPH6415 Datasheet
CPH6415
Manufacturer Part Number
CPH6415
Description
General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.CPH6415.pdf
(4 pages)
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CPH6415
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CPH6415-TL-E
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Ordering number : ENN7284A
CPH6415
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KR
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
V DSS
V GSS
t d (on)
t d (off)
I DSS
I GSS
Coss
Crss
Tstg
Ciss
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (1200mm
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =2A
I D =2A, V GS =4V
I D =1A, V GS =2.5V
I D =0.5A, V GS =1.8V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
CPH6415
Conditions
Conditions
13105 TS IM TB-00001149 / 83002 TS IM TA-100009
2
0.8mm)
min
0.4
3.8
20
Ratings
typ
Ratings
280
5.5
48
63
80
60
38
13
50
33
30
Continued on next page.
--55 to +150
max
150
1.6
120
1.3
20
10
16
10
63
88
4
1
No.7284-1/4
Unit
Unit
m
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A
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CPH6415 Summary of contents
Page 1
... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH6415 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...
Page 2
... IT05026 Ratings min typ max 5.0 0.85 0.85 0. =10V = OUT PW= CPH6415 =10V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit ...
Page 3
... Drain Current 4 =10V I D =4A 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge 2.0 1.6 1.5 1.0 0 100 Ambient Temperature CPH6415 =10V 0.3 IT05028 1000 100 ...
Page 4
... Note on usage : Since the CPH6415 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...