CPH6615 Sanyo Semicon Device, CPH6615 Datasheet

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CPH6615

Manufacturer Part Number
CPH6615
Description
General Purpose Switching Device Application
Manufacturer
Sanyo Semicon Device
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPH6615-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
www.DataSheet4U.com
Ordering number : ENN8069
CPH6615
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : WB
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
The CPH6615 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
Ultrahigh-speed switching, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
Best suited for load switches.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
I DSS
Coss
Crss
Ciss
Tstg
I DP
Tch
P D
yfs
I D
I D =1mA, V GS =0
V DS =30V, V GS =0
V GS = 16V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1.5A
I D =1.5A, V GS =10V
I D =1A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
CPH6615
Conditions
Conditions
2
0.8mm)1unit
N-channel
min
D1004PE TS TB-00000653
1.2
1.2
30
--55 to +150
2.5
30
20
10
Ratings
150
0.9
typ
150
187
2.0
79
40
33
P-channel
Continued on next page.
max
--1.8
--7.2
- -30
105
210
20
2.6
10
1
No.8069-1/6
Unit
Unit
m
m
pF
pF
pF
W
V
V
A
A
V
V
S
C
C
A
A

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CPH6615 Summary of contents

Page 1

... Ordering number : ENN8069 CPH6615 Features The CPH6615 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, • Ultrahigh-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. • Best suited for load switches. • 4V drive. • Specifications Absolute Maximum Ratings at Ta=25 C ...

Page 2

... Gate1 2 : Source2 3 : Gate2 4 : Drain2 0 Source1 6 : Drain1 SANYO : CPH6 CPH6615 Symbol Conditions t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =10V =2.5A Qgs V DS =10V =10V ...

Page 3

... V DD =15V 10V PW= 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage 3 =10V 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2.0 Gate-to-Source Voltage CPH6615 [P-channel] --10V I D =1. =10 V OUT P.G [Nch] --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0 =2.5V --0.2 0.7 0.8 0.9 1.0 IT07298 [Nch] --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 2.5 3.0 3.5 4.0 IT07300 --15V -- =15 ...

Page 4

... Drain Current 1 0 0.01 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage CPH6615 [Nch] 800 Ta=25 C 700 600 500 400 300 --0.5A 200 100 IT07302 [Nch] 600 500 400 300 200 100 0 100 120 ...

Page 5

... Operation in this area is limited (on). 0 Ta= Single pulse 2 2 Mounted on a ceramic board (900mm 0.8mm) 1unit 0. 0.01 0.1 1.0 Drain-to-Source Voltage CPH6615 [Nch =15V =10V 2 100 1 --0.01 ...

Page 6

... Ambient Temperature Note on usage : Since the CPH6615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

Page 7

...

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