PHN603S Philips Semiconductors, PHN603S Datasheet

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PHN603S

Manufacturer Part Number
PHN603S
Description
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
FEATURES
• Schottky diode across each
MOSFET
• Low on-state resistance
• Fast switching
• Logic level compatible
• Surface mount package
GENERAL DESCRIPTION
Six
mode, logic level, field-effect
power transistors and six schottky
diodes
half-bridges. This device has low
on-state
switching.
application is in computer disk and
tape drives as a three phase
brushless d.c. motor driver.
The PHN603S is supplied in the
SOT137-1
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.
October 1998
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
SYMBOL
V
V
V
V
I
I
P
P
T
D
DM
stg
DS
DS
DGR
GS
tot
tot
, T
n-channel,
j
configured
resistance
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per device (DC)
Drain current per device (pulse
peak value)
Total power dissipation per device
Total power dissipation all devices
conducting
Storage & operating temperature
(SO24)
The
enhancement
as
and
intended
surface
three
fast
SYMBOL
G6
G1
D4
D1
PINNING
PIN
1,4
2
3
5,8
6
7
9,12
10
11
13
14-16, 18-20, 22-24 drain 4
17
21
S1
G5
D2
G2
CONDITIONS
T
T
R
T
T
T
T
T
T
T
j
j
a
a
a
a
a
a
a
GS
= 25 ˚C to 150˚C
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 100 ˚C
S2
80 ˚C
= 20 k
1
DESCRIPTION
drain 1
source 1
gate 1
drain 2
source 2
gate 2
drain 3
source 3
gate 3
gate 4
gate 5
gate 6
1
G4
D3
G3
S3
SOT137-1 (SO24)
QUICK REFERENCE DATA
12
1
R
R
MIN.
- 55
DS(ON)
DS(ON)
-
-
-
-
-
-
-
-
-
-
-
55 m (V
35 m (V
V
Product specification
Top view
I
D
DS
MAX.
= 5.5 A
1.67
0.67
2.78
1.11
150
5.5
3.5
= 25 V
25
25
25
22
20
GS
PHN603S
GS
= 4.5 V)
= 10 V)
Rev 1.000
UNIT
W
W
W
W
˚C
V
V
V
V
A
A
A
24
13

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PHN603S Summary of contents

Page 1

... The intended application is in computer disk and tape drives as a three phase brushless d.c. motor driver. The PHN603S is supplied in the SOT137-1 (SO24) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER ...

Page 2

... G Resistive load MHz GS DS CONDITIONS ˚ 2 2 100 ˚ 0 0 Product specification PHN603S TYP. MAX. UNIT K/W MIN. TYP. MAX. UNIT 1.0 1 150˚C 0 ...

Page 3

... Transient Thermal Impedance, Zth j-a (K/W) 100 10 1 0.1 0.01 100 125 150 1E-06 Fig.5. Transient thermal impedance; Schottky Diode. 4 junctions PHN603S tp = 100 us Rth j MOSFET 10 ms 100 ms 10 100 = 25 ˚ Product specification PHN603S D = 0.5 0.2 0.1 0. Single pulse T 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 pulse width f(t); parameter j-a p SCHOTTKY Single pulse P D ...

Page 4

... Drain current SOT223 30V Trench Normalised RDS(ON) = f(Tj 100 f(T ) DS(ON) DS(ON)25 ˚C j VGS(TO typ. min. - 100 Fig.12. Gate threshold voltage. = f(T ); conditions mA; V GS(TO PHN603S PHN603S 150 ˚ 150 PHN1013 150 200 = Rev 1.000 ...

Page 5

... Product specification Gate-source voltage, VGS ( VDD = Gate charge, QG (nC f Source-Drain Diode Current, IF (A) VGS = 0 V 150 0.1 0.2 0.3 0.4 0.5 0.6 Drain-Source Voltage, VSDS (V) Fig.16. Typical reverse diode current. = f(V ); conditions parameter T SDS GS PHN603S PHN603S 20 25 PHN603S 0.7 0.8 j Rev 1.000 ...

Page 6

... REFERENCES IEC JEDEC EIAJ 075E05 MS-013AD 6 Product specification SOT137 detail ( 1.1 1.1 0.9 0.25 0.25 0.1 0.4 1.0 0 0.043 0.043 0.035 0.01 0.01 0.004 0.016 0.039 0.016 EUROPEAN ISSUE DATE PROJECTION 95-01-24 97-05-22 PHN603S Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 7 Product specification PHN603S Rev 1.000 ...

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