PHN603S Philips Semiconductors, PHN603S Datasheet - Page 4

• Manufacturer Part Number: PHN603S
• Description: TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1998
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
5
4
3
2
1
0
0.45
0.35
0.25
0.15
0.05
4.5
3.5
2.5
1.5
0.5
Fig.7. Typical output characteristics, T
0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
Fig.8. Typical on-state resistance, T
0
0
Drain Current, ID (A)
0
Drain current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
VDS > ID X RDS(ON)
4.5 V
Fig.9. Typical transfer characteristics.
10V
0.5
1
R
I
2.8V
DS(ON)
Drain-Source Voltage, VDS (V)
D
1
= f(V
Gate-source voltage, VGS (V)
Drain Current, ID (A)
1
= f(I
2
VGS = 3.4 V
DS
3V
I
D
); parameter V
2
D
1.5
= f(V
); parameter V
3.2V
3
GS
2
)
3
2.4 V
150 C
10V
Tj = 25 C
2.5
4
GS
PHN603S
Tj = 25 C
VGS = 3.4 V
GS
4
j
3.2 V
2.6 V
2.8 V
Tj = 25 C
= 25 ˚C .
3 V
j
PHN603S
PHN603S
= 25 ˚C .
3
4.5V
5
5
3.5
4
Fig.11. Normalised drain-source on-state resistance.
10
1.5
0.5
9
8
7
6
5
4
3
2
1
0
Fig.10. Typical transconductance, T
2
1
0
V
-50
0
5
4
3
2
1
0
-100
a
GS(TO)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
VGS(TO) / V
0.5
min.
typ.
Fig.12. Gate threshold voltage.
= f(T
SOT223 30V Trench
-50
1
R
j
); conditions: I
0
DS(ON)
1.5
0
Drain current, ID (A)
/R
g
2
fs
Tj / C
DS(ON)25 ˚C
= f(I
Tj / C
50
2.5
50
Tj = 25 C
Normalised RDS(ON) = f(Tj)
D
D
)
= 1 mA; V
3
100
= f(T
Product specification
3.5
100
j
)
150
PHN1013
4
PHN603S
j
150 C
DS
= 25 ˚C .
PHN603S
= V
4.5
Rev 1.000
200
GS
150
5