PHP45N03LTA Philips Semiconductors, PHP45N03LTA Datasheet - Page 2

• Manufacturer Part Number: PHP45N03LTA
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09023
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
D
DM
S
SM
DS
tot
j
DS
DGR
GS
GSM
tot
stg
j
AS
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive avalanche energy
Quick reference data
Limiting values
Conditions
T
T
T
V
V
V
Conditions
T
T
t
duty cycle 25 %; T
T
T
T
T
unclamped inductive load;
I
R
Rev. 02 — 02 November 2001
p
D
j
mb
mb
j
j
mb
mb
mb
mb
mb
mb
GS
GS
GS
GS
= 25 to 175 C
= 25 to 175 C
= 25 to 175 C; R
= 40 A; t
50 s; pulsed;
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 50 ; V
= 5 V; I
= 3.5 V; I
p
D
= 0.1 ms; V
D
Figure 1
N-channel enhancement mode field-effect transistor
= 25 A
D
GS
GS
= 25 A
GS
= 5.2 A
GS
= 5V; starting T
= 5 V
= 5 V;
PHP/PHB/PHD45N03LTA
j
= 5 V;
GS
150 C
p
p
= 20 k
DD
Figure 2
10 s;
10 s
Figure 2
= 15 V;
Figure 3
j
and
= 25 C;
3
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
-
-
-
-
17.5
22
13
Min
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
25
40
65
175
21
24
40
Max
25
25
40
30
160
65
+175
+175
40
160
60
15
20
2 of 14
Unit
V
A
W
m
m
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
C
C
C