PHP45N03LTA Philips Semiconductors, PHP45N03LTA Datasheet - Page 5

• Manufacturer Part Number: PHP45N03LTA
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09023
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
R
Rev. 02 — 02 November 2001
D
D
D
S
DS
GS
GS
GS
GS
GS
DD
G
T
T
T
T
T
T
T
T
T
T
T
= 25 A; V
= 0.25 mA; V
= 1 mA; V
= 40 A; V
= 6 ; resistive load
j
j
j
j
j
j
j
j
j
j
j
= 10 V; I
= 3.5 V; I
= 25 V; V
= 5 V; V
= 5 V; I
= 0 V; V
= 15 V; I
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
= 25 C
= 25 C
D
GS
DD
DS
DS
D
D
D
= 25 A;
GS
DS
N-channel enhancement mode field-effect transistor
= 25 A;
= 15 A; V
= 0 V;
= 24 V; V
= 5.2 A;
= V
= 25 V; f = 1 MHz;
GS
= 0 V
= 0 V
PHP/PHB/PHD45N03LTA
= 0 V
GS
;
Figure 12
Figure 7
Figure 7
Figure 9
Figure 7
GS
GS
= 5 V;
= 10 V;
and
and
and
Figure 13
Figure 11
8
8
8
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Min
25
22
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
10
17.5
30
13
22
19
5
8
700
290
200
10
60
35
40
0.95
Max
-
-
2
-
2.3
10
500
100
24
40.8
21
40
-
-
11
-
-
-
20
90
60
60
1.2
5 of 14
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A