BUK108-50GS Philips Semiconductors, BUK108-50GS Datasheet - Page 8

• Manufacturer Part Number: BUK108-50GS
• Description: PowerMOS transistor TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
TOPFET
Fig.20. Test circuit for resistive load switching times.
Fig.18. Typical DC input characteristics, T
I
ISL
Fig.19. Typical reverse diode current, T
5
4
3
2
1
0
60
50
40
30
20
10
0
0
= f(V
IIS / mA
I
0
IS / A
S
VIS
= f(V
RESET
IS
2
); overload protection operated
0.2
SDS
); conditions: V
PROTECTION LATCHED
4
0.4
R
I
0.6
6
TOPFET
I
VIS / V
VSD / V
RL
P
NORMAL
0.8
8
IS
= 0 V; t
D
S
ID measure
VDD
0R1
D.U.T.
10
1
p
= 250 s
BUK108-50GS
1.2
12
BUK108-50GS
j
= 25 ˚C.
j
= 25 ˚C.
I
D
0V
= 0 A
1.4
14
8
Fig.23. Test circuit for inductive load switching times.
Fig.21. Typical switching waveforms, resistive load.
Fig.22. Typical switching waveforms, resistive load.
10
10
5
0
5
0
V
V
0
0
VIS
t p
RESISTIVE TURN-ON
RESISTIVE TURN-OFF
DD
DD
10%
: adjust for correct ID
= 13 V; R
= 13 V; R
VIS / V
90%
td on
10%
L
L
R
= 4 ; R
= 4 ; R
I
ID / A
td off
tr
TOPFET
I
time / us
time / us
90%
90%
10
10
LD
I
I
P
= 50 , T
= 50 , T
D
S
ID measure
VDD = VCL
BUK108-50GS
tf
Product specification
0R1
D.U.T.
10%
j
j
BUK108-50GS
BUK108-50GS
= 25 ˚C.
= 25 ˚C.
VIS / V
VDS / V
ID / A
VDS / V
Rev 1.000
0V
20
20