BUK108-50GS Philips Semiconductors, BUK108-50GS Datasheet - Page 9

• Manufacturer Part Number: BUK108-50GS
• Description: PowerMOS transistor TOPFET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
June 1996
PowerMOS transistor
TOPFET
Fig.24. Typical switching waveforms, inductive load.
Fig.25. Typical switching waveforms, inductive load.
120
110
100
90
80
70
60
50
40
30
20
10
10
15
10
E
0
5
0
5
0
Fig.26. Normalised limiting clamping energy.
DSM
V
V
0
0
0
EDSM%
INDUCTIVE TURN-ON
INDUCTIVE TURN-OFF
DD
DD
% = f(T
10%
= 13 V; I
= 13 V; I
20
VDS
VIS / V
90%
2
mb
); conditions: I
40
D
D
= 3 A; R
= 3 A; R
ID / A
4
60
10%
td off
90%
time / us
time / us
Tmb / C
td on
10
tr
I
I
= 50 , T
= 50 , T
80
D
6
= 15 A; V
100
j
j
= 25 ˚C.
= 25 ˚C.
BUK108-50GS
BUK108-50GS
8
120
VIS / V
IS
ID / A
= 10 V
90%
VDS / V
10%
tf
140
10
20
9
Fig.29. Normalised input current (normal operation).
100 uA
100 nA
Fig.27. Clamping energy test circuit, R
1.5
0.5
10 uA
1 mA
1 uA
VDS
ID
VIS
1
0
0
0
I
-60
DSS
Fig.28. Typical off-state leakage current.
Iiso normalised to 25 C
0
Idss
E
= f(T
DSM
-20
I
RIS
20
IS
j
); Conditions: V
/I
0.5 LI
IS
25 ˚C = f(T
V(CL)DSS
VDD
40
20
I
TOPFET
D
Schottky
2
V
P
60
CL DSS
60
Tj / C
D
S
Tj / C
j
); V
L
DS
D.U.T.
80
VDS
V
IS
= 40 V; I
100
BUK108-50GS
CL DSS
Product specification
= 10 V
100
typ.
shunt
R 01
140
+
V
-
IS
120
IS
DD
= 0 V.
= 50 .
Rev 1.000
-ID/100
VDD
180
140