BUK456-100B Philips Semiconductors, BUK456-100B Datasheet - Page 3

• Manufacturer Part Number: BUK456-100B
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1998
PowerMOS transistor
ID% = 100 I
I
120
110
100
Fig.2. Normalised continuous drain current.
D
120
110
100
1000
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
100
0
& I
0
10
Fig.3. Safe operating area. T
1
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
DM
1
ID / A
= f(V
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
DS
); I
60
60
= f(T
DM
10
DC
single pulse; parameter t
80
80
Tmb / C
Tmb / C
mb
D
VDS / V
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
B
A
120
120
100
= f(T
100 us
10 ms
100 ms
BUK456-100A,B
1 ms
tp = 10 us
mb
140
140
mb
= 25 ˚C
)
160
160
GS
1000
180
180
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.001
0.2
0.1
70
60
50
40
30
20
10
0.01
0
0.1
0
10
1
0
0
ID / A
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
Zth j-mb / (K/W)
D =
0.05
0.02
Z
0.5
0.2
0.1
4.5 5
R
0
th j-mb
VGS / V =
I
DS(ON)
D
2
= f(V
1E-05
20
= f(t); parameter D = t
= f(I
5.5
15
DS
); parameter V
4
D
); parameter V
VDS / V
20
ID / A
1E-03
6
t / s
40
P
D
BUK456-100A/B
6
6.5
10
Product specification
t
p
T
1E-01
7
60
GS
BUK456-100A
BUK456-100A
D =
8
VGS / V =
GS
p
8
BUKx56-lv
/T
7.5
j
t
T
p
j
t
= 25 ˚C .
= 25 ˚C .
Rev 1.100
1E+01
20
10
8
7
6
5
4
10
80