BUK456-100B Philips Semiconductors, BUK456-100B Datasheet - Page 5

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BUK456-100B

Manufacturer Part Number
BUK456-100B
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
April 1998
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
12
10
8
6
4
2
0
= f(Q
0
VGS / V
G
); conditions: I
20
QG / nC
D
= 34 A; parameter V
VDS / V =20
80
BUK456-100
40
DS
5
I
F
70
60
50
40
30
20
10
= f(V
0
Fig.14. Typical reverse diode current.
0
IF / A
SDS
); conditions: V
Tj / C = 150
VSDS / V
1
GS
BUK456-100A/B
= 0 V; parameter T
25
Product specification
BUK456-100A
Rev 1.100
2
j

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