BUK482-60A Philips Semiconductors, BUK482-60A Datasheet - Page 3

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BUK482-60A

Manufacturer Part Number
BUK482-60A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
April 1993
PowerMOS transistor
ID% = 100 I
1E+02
1E+01
1E+00
1E-01
1E-02
Fig.2. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
1E-07
Fig.1. Normalised power dissipation.
Fig.3. Transient thermal impedance.
0
0
PD%
ID%
Zth j-amb / (K/W)
0.05
0.02
D =
0.5
0.2
0.1
Z
PD% = 100 P
0
th j-amb
D
20
20
/I
1E-05
D 25 ˚C
= f(t); parameter D = t
40
40
= f(T
1E-03
60
60
amb
D
Tamb / C
Tamb / C
/P
t / s
); conditions: V
D 25 ˚C
Normalised Current Derating
80
80
Normalised Power Derating
1E-01
P
= f(T
D
100
100
t
1E+01
p
amb
T
120
120
p
/T
)
BUKX82
D =
GS
140
140
t
T
1E+03
p
t
10 V
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
I
D
& I
Fig.4. Safe operating area T
0.5
0.4
0.3
0.2
0.1
0.01
10
100
0.1
9
8
7
6
5
4
3
2
1
0
0
10
DM
1
0
0.1
RDS(ON) / Ohm
0
ID / A
15
ID / A
= f(V
R
I
DS(ON)
D
4.5
DS
= f(V
2
2
10
); I
7
= f(I
1
DM
DS
5
); parameter V
single pulse; parameter t
DC
D
4
4
); parameter V
VDS / V
VDS / V
ID / A
5.5
10
6
6
Product Specification
6
BUK482-60A
VGS / V = 15
amb
BUK482-60A
tp = 10 us
100 us
1 ms
10 ms
100 ms
1 s
10 s
100
VGS / V = 4
BUK482-60A
BUK482-60A
GS
8
8
= 25 ˚C
GS
j
j
= 25 ˚C .
6.5
6.5
5.5
4.5
= 25 ˚C .
10
5
6
7
10
10
Rev 1.000
p

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