BUK7635-55 Philips Semiconductors, BUK7635-55 Datasheet - Page 4

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BUK7635-55

Manufacturer Part Number
BUK7635-55
Description
TrenchMOS transistor Standard level FET
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
ID/A
ID/A
100
Fig.5. Typical output characteristics, T
I
80
60
40
20
D
Fig.6. Typical on-state resistance, T
65
60
55
50
45
40
35
30
25
0
70
60
50
40
30
20
10
0
= f(V
0
0
RD(ON)/mOhm
VGS/V =
0
Fig.7. Typical transfer characteristics.
GS
Tj/C =
10
16
14
12
) ; conditions: V
R
2
2
I
DS(ON)
D
6
= f(V
20
175
= f(I
transistor
6.5
4
DS
4
VGS/V
); parameter V
30
D
); parameter V
VDS/V
ID/A
25
DS
7
6
40
= 25 V; parameter T
6
8
50
8
GS
GS
8
9
j
VGS/V =
j
= 25 ˚C .
60
10
= 25 ˚C .
10
10
70
10.0
12
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
Fig.8. Typical transconductance, T
2.5
1.5
0.5
16
14
12
10
-100
5
4
3
2
1
0
GS(TO)
8
6
4
2
-100
2
1
VGS(TO) / V
0
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
10
/R
-50
= f(I
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
20
); conditions: V
0
0
Tmb / degC
= f(T
Tj / C
30
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
40
D
= 1 mA; V
100
= 17 A; V
100
DS
Product specification
= 25 V
BUK7635-55
50
150
BUK759-60
150
j
= 25 ˚C .
DS
GS
60
= V
= 10 V
Rev 1.100
200
200
GS
70

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