BUK7635-55 Philips Semiconductors, BUK7635-55 Datasheet - Page 5

• Manufacturer Part Number: BUK7635-55
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
VGS/V
V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
GS
Fig.12. Typical capacitances, C
0
0.01
I
C = f(V
12
10
D
8
6
4
2
0
0
= f(Q
0
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
); conditions: V
5
; conditions: T
1
0.1
transistor
10
2%
2
VDS = 14V
1
QG/nC
D
15
= 30 A; parameter V
j
GS
= 25 ˚C; V
typ
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
3
20
iss
10
VDS = 44V
, C
98%
DS
oss
4
25
= V
, C
GS
rss
100
.
DS
Coss
Ciss
Crss
30
5
5
VGS
IF/A
0
I
100
Fig.15. Normalised avalanche energy rating.
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
); conditions: V
% = f(T
RGS
0.5 LI
60
0.5
mb
Tj/C =
80
); conditions: I
D
2
BV
VSDS/V
Tmb / C
100
175
GS
DSS
L
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
DSS
1
BUK7635-55
140
D
shunt
= 32 A
R 01
V
DD
25
160
-
+
Rev 1.100
-ID/100
180
VDD
1.5
j