HUF76121SK8 Intersil Corporation, HUF76121SK8 Datasheet

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HUF76121SK8

Manufacturer Part Number
HUF76121SK8
Description
8A/ 30V/ 0.023 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
Manufacturer
Intersil Corporation
Datasheet
8A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76121.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76121SK8T.
Packaging
HUF76121SK8
PART NUMBER
MS-012AA
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
PACKAGE
1
SABER
Data Sheet
76121SK8
©
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207
BRAND
BRANDING DASH
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
1
JEDEC MS-012AA
2
3
4
Features
• Logic Level Gate Drive
• 8A, 30V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting
• Related Literature
Symbol
- Temperature Compensated PSPICE™ and SABER
- Spice and SABER
- www.Intersil.com
Area
- TB370, “Guidelines for Soldering Surface Mount
Electrical Models
Components to PC Boards”
SOURCE(2)
SOURCE(3)
GATE(4)
5
April 1999
NC (1)
©
Thermal Impedance Models
|
Copyright
HUF76121SK8
File Number 4737
©
Intersil Corporation 1999
DRAIN(8)
DRAIN(7)
DRAIN(6)
DRAIN(5)
©

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HUF76121SK8 Summary of contents

Page 1

... Formerly developmental type TA76121. Ordering Information PART NUMBER PACKAGE HUF76121SK8 MS-012AA NOTE: When ordering, use the entire part number. Add the suffi obtain the variant in tape and reel, e.g., HUF76121SK8T. Packaging 1 SABER Features • Logic Level Gate Drive • 8A, 30V • ...

Page 2

... Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient SWITCHING SPECIFICATIONS (V = 4.5V) GS Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 2 HUF76121SK8 Unless Otherwise Specified , footprint at 10 seconds. 2 footprint at 1000 seconds Unless Otherwise Specified ...

Page 3

... Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Typical Performance Curves 1.2 1.0 0.8 0.6 0.4 0 AMBIENT TEMPERATURE ( A FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 3 HUF76121SK8 Unless Otherwise Specified SYMBOL TEST CONDITIONS 15V, I 8A d(ON) ...

Page 4

... OPERATION IN THIS 10 AREA MAY BE LIMITED BY r DS(ON) BV DSS MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 5. FORWARD BIAS SAFE OPERATING AREA 4 HUF76121SK8 (Continued) SINGLE PULSE - RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY ...

Page 5

... V , GATE TO SOURCE VOLTAGE (V) GS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 5 HUF76121SK8 (Continued - FIGURE 10. NORMALIZED DRAIN TO SOURCE 250 A ...

Page 6

... 125 100 GATE TO SOURCE RESISTANCE ( ) GS FIGURE 15. SWITCHING TIME vs GATE RESISTANCE 6 HUF76121SK8 (Continued 0V 1MHz GS C ISS C OSS C RSS NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT 200 = 6 ...

Page 7

... VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT g(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 21. SWITCHING TIME TEST CIRCUIT 7 HUF76121SK8 DUT 0. DUT 0 I ...

Page 8

... FIGURE 24. THERMAL IMPEDANCE vs MOUNTING PAD AREA 8 HUF76121SK8 , and the ther- Thermal resistances corresponding to other copper areas can JM be obtained from Figure calculation using Equation defined as the natural log of the area times a cofficient DM JA added to a constant. The area, in square inches is the top ...

Page 9

... PSPICE Electrical Model .SUBCKT HUF76121SK8 REV January 1999 1.3e 1.28e-9 CIN 6 8 7.6e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 33.4 EDS EGS ESG EVTHRES EVTEMP ...

Page 10

... SABER Electrical Model REV January 1999 template huf76121sk8 n2, n1, n3 electrical n2, n1 var i iscl d..model dbodymod = (is = 2e-13, xti = 4.3, cjo = 1.33e- 2.8e- 0.95 0.4) d..model dbreakmod = () d..model dplcapmod = (cjo = 8.2e-10 1e-30 10 0.63) m..model mmedmod = (type=_n, vto = 1. 1e-30, tox = 1) m..model mstrongmod = (type=_n, vto = 2.23 42. 1e-30, tox = 1) m..model mweakmod = (type=_n, vto = 1.64 0. 1e-30, tox = 1) sw_vcsp ...

Page 11

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 11 HUF76121SK8 RTHERM1 RTHERM2 RTHERM3 ...

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