SIR470DP Vishay Siliconix, SIR470DP Datasheet - Page 6

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SIR470DP

Manufacturer Part Number
SIR470DP
Description
N-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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SiR470DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68899.
10
1
10
-4
-4
0.1
0.02
0.05
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
10
-3
Single Pulse
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
S-82295-Rev. A, 22-Sep-08
t
2
Document Number: 68899
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 54 °C/W
1000
1
0

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