RFD3N08 Intersil Corporation, RFD3N08 Datasheet - Page 5

• Manufacturer Part Number: RFD3N08
• Description: 3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Typical Performance Curves
Test Circuits and Waveforms
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VARY t
REQUIRED PEAK I
0V
180
150
120
90
60
30
2.0
1.5
1.0
0.5
0
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0
0
-80
P
TO OBTAIN
C
C
C
I
RSS
D
V
ISS
OSS
t
GS
= 250 A
P
VOLTAGE vs JUNCTION TEMPERATURE
-40
V
5
AS
DS
T
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
6-30
10
R
G
40
80
15
V
Unless Otherwise Specified (Continued)
I
V
C
C
C
AS
DS
120
GS
ISS
RSS
OSS
DUT
= 0V, f = 1MHz
o
= C
0.01
RFD3N08L, RFD3N08LSM
= C
C)
20
L
C
GS
GD
DS
160
+ C
+ C
+
-
GD
GD
V
DD
200
25
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
0
100
80
60
40
20
80
60
40
20
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
0
0
0
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
V
DD
= 40V, I
20
CONSTANT GATE CURRENT
I
I
R
G(REF)
G(ACT)
10
GS
D
, GATE TO SOURCE RESISTANCE ( )
PLATEAU VOLTAGES IN
DESCENDING ORDER:
= 3A, R
I
AS
V
V
V
V
DD
DD
DD
DD
R
I
V
G(REF)
GS
L
t, TIME ( s)
= BV
= 0.75 BV
= 0.50 BV
= 0.25BV
t
= 26.67
L
P
20
= 5V
= 13.3
DSS
= 0.1mA
DSS
DSS
DSS
BV
t
AV
DSS
30
80
I
I
G(REF)
G(ACT)
V
DS
40
t
t
d(OFF)
d(ON)
5.00
3.75
2.50
1.25
0
V
t
r
DD
t
f
50