MTP60N06HD Motorola, MTP60N06HD Datasheet

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MTP60N06HD

Manufacturer Part Number
MTP60N06HD
Description
TMOS POWER FET
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
HDTMOS
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Drain Current — Continuous
Total Power Dissipation
Derate above 25 C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak I L = 60 Apk, L = 0.3 mH, R G = 25
Thermal Resistance — Junction to Case
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high–cell density HDTMOS power FET is
Motorola, Inc. 1995
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
E-FET.
Data Sheet
10 s)
Rating
10 ms)
G
D
S
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JC
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTP60N06HD
R DS(on) = 0.014 OHM
CASE 221A–06, Style 5
TMOS POWER FET
Motorola Preferred Device
– 55 to 175
60 AMPERES
Value
42.3
62.5
180
150
540
260
60 VOLTS
1.0
1.0
TO–220AB
60
60
60
20
30
Order this document
by MTP60N06HD/D
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTP60N06HD Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 ms) Order this document by MTP60N06HD/D MTP60N06HD Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS(on) = 0.014 OHM CASE 221A–06, Style 5 TO– ...

Page 2

... MTP60N06HD ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 125 C) Gate–Body Leakage Current ...

Page 3

... Figure 4. On–Resistance versus Drain Current 1000 100 10 1 100 125 150 DRAIN–TO–SOURCE VOLTAGE (Volts) Figure 6. Drain–To–Source Leakage MTP60N06HD 100 – 3.6 4.4 5.2 6.0 6.8 7 ...

Page 4

... MTP60N06HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses 0.6 0.7 0.8 0 SOURCE–TO–DRAIN VOLTAGE (Volts) MTP60N06HD d(off) t d(on) 10 100 GATE RESISTANCE (Ohms) 1.0 5 ...

Page 6

... MTP60N06HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...

Page 7

... P (pk DUTY CYCLE 1.0E–03 1.0E–02 1.0E–01 t, TIME (s) Figure 14. Thermal Response di/ 0. MTP60N06HD R JC ( CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME J(pk) – (pk (t) 1.0E+00 1.0E+01 TIME 7 ...

Page 8

... F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04 MTP60N06HD/D ...

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