MTP60N06HD Motorola, MTP60N06HD Datasheet - Page 3

• Manufacturer Part Number: MTP60N06HD
• Description: TMOS POWER FET
• Manufacturer: Motorola

Motorola TMOS Power MOSFET Transistor Device Data
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
– 50
0
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
10
0.5
V GS = 10 V
– 25
Figure 5. On–Resistance Variation with
V GS = 10 V
I D = 30 A
Figure 1. On–Region Characteristics
20
V DS , DRAIN–TO–SOURCE VOLTAGE (Volts)
1.0
30
T J , JUNCTION TEMPERATURE ( C)
0
1.5
I D , DRAIN CURRENT (Amps)
40
and Temperature
25
Temperature
2.0
9 V
50
8 V
2.5
T J = 100 C
60
50
– 55 C
25 C
TYPICAL ELECTRICAL CHARACTERISTICS
70
3.0
75
80
3.5
T J = 25 C
100
90
7 V
6 V
5 V
4.0
100
125
4.5
110
120
150
5.0
0.0132
0.0128
0.0124
0.0120
0.0108
0.0104
0.0100
0.0116
0.0112
1000
120
100
100
80
60
40
20
10
0
1
2.0
0
0
Figure 4. On–Resistance versus Drain Current
V GS = 0 V
T J = 25 C
V DS 10 V
10
2.8
Figure 6. Drain–To–Source Leakage
10
Figure 2. Transfer Characteristics
20
V DS , DRAIN–TO–SOURCE VOLTAGE (Volts)
V GS , GATE–TO–SOURCE VOLTAGE (Volts)
30
Current versus Voltage
3.6
I D , DRAIN CURRENT (Amps)
T J = 125 C
40
and Gate Voltage
20
V GS = 10 V
100 C
4.4
50
15 V
60
30
100 C
T J = – 55 C
5.2
70
40
80
25 C
25 C
MTP60N06HD
6.0
90
100
50
6.8
110
3
120
7.6
60