NTD60N02R-001 ON, NTD60N02R-001 Datasheet - Page 3

• Manufacturer Part Number: NTD60N02R-001
• Description: Power MOSFET 62 A / 24 V / N-Channel / DPAK
• Manufacturer: ON

140
120
100
0.05
0.04
0.03
0.02
0.01
80
60
40
20
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
2
I
V
D
GS
−25
= 31 A
Figure 5. On−Resistance Variation with
V
V
Figure 1. On−Region Characteristics
= 10 V
DS
GS
Figure 3. On−Resistance versus
2
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
V
0
6.0 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.8 V
, JUNCTION TEMPERATURE ( C)
4
8.0 V
GS
Gate−to−Source Voltage
= 10 V
25
4
Temperature
50
6
75
6
T
100
J
= 25 C
TYPICAL CHARACTERISTICS
I
T
D
8
J
125
= 62 A
= 25 C
8
2.6 V
http://onsemi.com
4.5 V
5.0 V
150
2.4 V
NTD60N02R
10
10
175
3
100000
10000
1000
0.05
0.04
0.03
0.02
0.01
120
100
100
10
80
60
40
20
0
0
20
0
0
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
T
V
GS
J
T
DS
= 25 C
J
= 0 V
= 175 C
w 10 V
V
40
Figure 2. Transfer Characteristics
V
GS
DS
, GATE−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
6
2
I
D
, DRAIN CURRENT (A)
60
and Gate Voltage
T
versus Voltage
J
= −55 C
T
J
T
80
T
= 25 C
12
J
4
J
= 175 C
= 100 C
V
GS
= 4.5 V
100
V
GS
18
6
= 10 V
120
140
24
8