NTF2955 ON Semiconductor, NTF2955 Datasheet - Page 2

• Manufacturer Part Number: NTF2955
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

3. Pulse Test: pulse width
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
300ms, duty cycle
V
(T
V
(BR)DSS
Symbol
V
Q
R
J
Q
t
(BR)DSS
C
C
t
=25 C unless otherwise stated)
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
t
t
FS
ISS
t
t
SD
GS
GD
RR
a
b
r
f
(
2%.
/T
)
J
V
V
http://onsemi.com
V
V
GS
GS
V
V
V
V
V
DS
V
V
V
V
I
I
V
V
V
GS
GS
S
GS
GS
GS
I
I
GS
GS
GS
GS
GS
GS
D
DS
= 0 V, dI
= 0 V, dI
= 1.5 A
= −60 V
NTF2955
= 1.5 A, R
= 0 V,
= 0 V,
= −10 V, I
= −15 V, I
Test Condition
1 5 A
= V
= 10 V, V
= −10 V, I
= −10 V, I
= 10 V, V
= 0 V, I
= 0 V, V
= 0 V, f = 1.0 MHz,
1 5 A R
60 V
V
V
R
R
I
I
I
DS
D
S
DS
2
L
L
= 1.5 A
= 1.5 A
= 25
, I
S
S
= 25 V
1 5 A
/dt = 100 A/ms,
/dt = 100 A/ms,
D
D
25
GS
25 V
D
D
DS
DD
G
= −250 mA
= −1.0 mA
D
D
= −0.75 A
= −0.75 A
= 9.1
= 20 V
= −1.5 A
= −2.4 A
T
T
= 30 V,
= 25 V,
T
T
9 1
J
J
J
J
= 125 C
= 125 C
= 25 C
= 25 C
−2.0
Min
−60
−1.10
0.139
66.4
1.77
14.3
−0.9
Typ
145
150
154
492
165
1.2
2.3
5.2
7.6
50
65
38
36
20
16
11
−1.30
Max
−1.0
−4.0
−50
170
180
185
100
mV/ C
Unit
m
nC
nC
mA
nA
pF
ns
ns
V
V
S
V