NTF2955 ON Semiconductor, NTF2955 Datasheet - Page 4

• Manufacturer Part Number: NTF2955
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

1200
1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
10
1
1
0.1
1
C
C
V
SINGLE PULSE
T
V
I
V
Figure 9. Resistive Switching Time Variation
rss
C
iss
D
GS
Figure 11. Maximum Rated Forward Biased
DD
GS
V
−V
= 25 C
= −1.5 A
DS
= −20 V
5
= −10 V
DS
= −25 V
t
t
d(off)
d(on)
= 0 V
−V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
t
t
f
r
THERMAL LIMIT
PACKAGE LIMIT
GS
R
R
versus Gate Resistance
0
DS(on)
G
Safe Operating Area
TYPICAL PERFORMANCE CURVES
V
−V
, GATE RESISTANCE ( )
1
GS
DS
LIMIT
= 0 V
5
dc
10
10
10 ms
10
15
1 ms
T
100 s
J
20
= 25 C
10 s
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C
C
C
iss
oss
rss
100
NTF2955
100
25
4
12
10
8
6
4
2
0
0
(T
250
200
150
100
50
Drain−to−Source Voltage versus Total Charge
Q
J
5
4
3
2
1
0
0
25
= 25 C unless otherwise noted)
GS
0
Figure 10. Diode Forward Voltage versus Current
Figure 12. Maximum Avalanche Energy versus
2
V
T
−V
GS
J
T
J
= 25 C
0.25
Figure 8. Gate−to−Source and
, STARTING JUNCTION TEMPERATURE ( C)
SD
Q
= 0 V
50
4
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
V
g
Starting Junction Temperature
, TOTAL GATE CHARGE (nC)
Q
DS
GD
0.5
6
75
Q
T
0.75
8
100
10
1
125
12
1.25
I
T
D
V
J
I
= −1.5 A
GS
= 25 C
PK
14
= −6.7 A
150
1.5
16
60
50
40
30
20
10
0
1.75
175