NTF3055-100 ON Semiconductor, NTF3055-100 Datasheet

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NTF3055-100

Manufacturer Part Number
NTF3055-100
Description
Power MOSFET 3 Amp
Manufacturer
ON Semiconductor
Datasheet

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www.DataSheet4U.com
N–Channel SOT–223
power supplies, converters and power motor controls and bridge
circuits.
Applications
1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area
2. When surface mounted to an FR4 board using minimum recommended pad
July, 2001 – Rev. 0
MAXIMUM RATINGS
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 10 M )
Gate–to–Source Voltage
Drain Current
Total Power Dissipation @ T A = 25 C (Note 1.)
Total Power Dissipation @ T A = 25 C (Note 2.)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2001
1.127 in 2 ).
size, 2–2.4 oz. (Cu. Area 0.272 in 2 ).
– Continuous
– Non–repetitive (t p
– Continuous @ T A = 25 C
– Continuous @ T A = 100 C
– Single Pulse (t p
Derate above 25 C
Energy – Starting T J = 25 C
(V DD = 25 Vdc, V GS = 10 Vdc,
I L (pk) = 7.0 Apk, L = 3.0 mH, V DS = 60 Vdc)
– Junction to Ambient (Note 1.)
– Junction to Ambient (Note 2.)
Purposes, 1/8 from case for 10 seconds
Rating
10 s)
(T C = 25 C unless otherwise noted)
10 ms)
Preferred Device
Symbol
T J , T stg
V DGR
V DSS
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
–55 to
Value
0.014
72.3
175
260
114
3.0
1.4
9.0
2.1
1.3
60
60
74
20
30
1
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
W
W
C
C
NTF3055–100T1
NTF3055–100T3
NTF3055–100T3LF SOT–223
1
2
Device
3
3055
L
WW
ORDERING INFORMATION
R DS(on) = 100 mW
4
http://onsemi.com
PIN ASSIGNMENT
3.0 AMPERES
= Device Code
= Location Code
= Work Week
60 VOLTS
CASE 318E
1
SOT–223
STYLE 3
SOT–223
SOT–223
Package
N–Channel
Publication Order Number:
4
2
3
1000 Tape & Reel
4000 Tape & Reel
4000 Tape & Reel
NTF3055–100/D
Shipping
MARKING
DIAGRAM
www.DataSheet4U.com
LWW
3055

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NTF3055-100 Summary of contents

Page 1

... stg – 175 C 72 114 T L 260 C Device NTF3055–100T1 NTF3055–100T3 NTF3055–100T3LF SOT–223 1 http://onsemi.com 3.0 AMPERES 60 VOLTS R DS(on) = 100 mW N–Channel MARKING DIAGRAM 4 SOT–223 3055 CASE 318E LWW STYLE 3 3055 = Device Code L = Location Code ...

Page 2

... SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 4. Switching characteristics are independent of operating junction temperatures. NTF3055–100 ( unless otherwise noted) Symbol V (BR)DSS I DSS 20 Vdc Vdc) I GSS ...

Page 3

... 1.8 1.6 1.4 1.2 1 0.8 0.6 –50 – 100 JUNCTION TEMPERATURE ( C) Figure 5. On–Resistance Variation with Temperature NTF3055–100 4 100 3.5 V GS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2 ...

Page 4

... SINGLE PULSE 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area NTF3055–100 iss oss Drain– ...

Page 5

... Cu Pad ( inch FR4) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 NTF3055–100 0.01 0 TIME (s) Figure 13. Thermal Response http://onsemi.com 5 10 100 1000 ...

Page 6

... NTF3055–100 PACKAGE DIMENSIONS SOT–223 (TO–261) CASE 318E–04 ISSUE http://onsemi.com ...

Page 7

... Notes NTF3055–100 http://onsemi.com 7 ...

Page 8

... NTF3055–100 JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTF3055–100/D ...

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