NTF3055-100 ON Semiconductor, NTF3055-100 Datasheet - Page 4

• Manufacturer Part Number: NTF3055-100
• Description: Power MOSFET 3 Amp
• Manufacturer: ON Semiconductor

0.01
800
700
600
500
400
300
200
100
100
100
0.1
10
10
0
1
1
10
0.1
1
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
V GS = 20 V
SINGLE PULSE
T C = 25 C
C iss
V DS = 30 V
I D = 3 A
V GS = 10 V
C rss
Figure 9. Resistive Switching Time Variation
V DS = 0 V
Figure 11. Maximum Rated Forward Biased
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5
V GS
Figure 7. Capacitance Variation
THERMAL LIMIT
PACKAGE LIMIT
t d(off)
R DS(on) LIMIT
R G , GATE RESISTANCE ( )
versus Gate Resistance
0
Safe Operating Area
V DS
1
V GS = 0 V
10 ms
5
(VOLTS)
10
C rss
t f
10
1 ms
100 s
10
t d(on)
15
C oss
C iss
t r
T J = 25 C
dc
20
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NTF3055–100
100
100
25
4
12
10
80
70
60
50
40
30
20
10
0.54
8
6
4
2
0
3
2
1
0
0
0
25
Figure 10. Diode Forward Voltage versus Current
Figure 12. Maximum Avalanche Energy versus
Drain–to–Source Voltage versus Total Charge
V GS = 0 V
T J = 25 C
Q 1
0.58
V SD , SOURCE–TO–DRAIN VOLTAGE (VOLTS)
T J , STARTING JUNCTION TEMPERATURE ( C)
50
2
0.62
Starting Junction Temperature
Figure 8. Gate–to–Source and
Q g , TOTAL GATE CHARGE (nC)
0.66
Q 2
75
4
Q T
0.7
100
6
0.74
V GS
0.78
125
8
0.82 0.86
I D = 7 A
I D = 3 A
T J = 25 C
150
10
0.9
175
12