TN0604 Supertex Inc, TN0604 Datasheet

TN0604

Manufacturer Part Number

TN0604

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN0604.pdf (4 pages)

Current page: 1 of 4
Download datasheet (45Kb)

Ordering Information

Features

Applications

02/06/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

* Same as

Distance of 1.6 mm from case for 10 seconds.

Low threshold — 1.6V max.

High input impedance

Low input capacitance — 140pF typical

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

40V

DSS

DGS

SO-20 with 300 mil wide body.

(max)

0.75Ω

1.0Ω

DS(ON)

(min)

4.0A

D(ON)

-55°C to +150°C

N-Channel Enhancement-Mode

Vertical DMOS FETs

(max)

1.6V

300°C

GS(th)

± 20V

DGS

DSS

TN0604N3

Order Number / Package

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Options

TO-92

Notes:

1. See Package Outline section for dimensions.

2. See Array section for quad pinouts.

—

TO-92

TN0604WG

S G D

SOW-20*

—

Low Threshold

SOW-20

TN0604

Related parts for TN0604

TN0604 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Notes: 1. See Package Outline section for dimensions. 2. See Array section for quad pinouts. 1 TN0604 Low Threshold SOW-20* — TN0604WG SOW-20 TO-92 ...

Page 2

... GS DS Ω 5V 0.75A GS D Ω 10V 1. %/° 10V 1. 20V 1. 0V 20V MHz 20V 0. 25Ω GEN PULSE R gen INPUT TN0604 I DRM 4.6A OUTPUT D.U.T. ...

Page 3

... 1.0 0.8 0.6 0.4 0.2 10 100 3 Saturation Characteristics (volts) DS Power Dissipation vs. Case Temperature TO- 100 125 ° Thermal Response Characteristics TO- 25° 0.001 0.01 0 (seconds) p TN0604 = 10V 150 10 ...

Page 4

... 10V GS 5.0 10.0 I (amperes) D and R Variation with Temperature (th 1mA (th 10V, 1. 100 150 T (°C) j Gate Drive Dynamic Characteristics V = 10V DS 170 pF 170 40V DS 1.0 2.0 3.0 4.0 5.0 Q (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com TN0604 1.4 1.2 1.0 0.8 0.6 02/06/02 ...

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