TN2124 Supertex Inc, TN2124 Datasheet

TN2124

Manufacturer Part Number

TN2124

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

Supertex Inc

Datasheet

1.TN2124.pdf (4 pages)

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Ordering Information

* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

** Prodcut supplied on 2000 piece carrier tape reels.

Features

Applications

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

08/30/99

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and

other Supertex products, refer to the Supertex 1998 Databook.

Distance of 1.6 mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

240V

DSS

DGS

ISS

and fast switching speeds

(max)

DS(ON)

(max)

2.0V

GS(th)

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55 C to +150 C

TO-243AA**

TN2124N8

Order Number / Package

300 C

20V

DGS

DSS

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

TO-236AB*

TN2124K1

Note: See Package Outline section for dimensions.

Gate

TO-236AB

(SOT-23)

top view

Drain

Source

where

Product marking for SOT-23:

Low Threshold

= 2-week alpha date code

TO-243AA

(SOT-89)

N1C

TN2124

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