TN2130 Supertex Inc, TN2130 Datasheet

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TN2130

Manufacturer Part Number
TN2130
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2130K1-G
Manufacturer:
SUPERTEX
Quantity:
20 000
Ordering Information
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
300V
DSS
DGS
/
ISS
and fast switching speeds
R
(max)
25Ω
DS(ON)
V
(max)
2.4V
GS(th)
TO-236AB*
TN2130K1
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
Order Number / Package
BV
BV
300°C
± 20V
DGS
DSS
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
TN2130ND
Note: See Package Outline section for dimensions.
Die
Gate
where ❋ = 2-week alpha date code
TO-236AB
(SOT-23)
top view
Drain
Product marking for SOT-23:
Low Threshold
Source
N1T❋
TN2130

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TN2130 Summary of contents

Page 1

... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 TN2130 Low Threshold Product marking for SOT-23: N1T❋ where ❋ = 2-week alpha date code Drain Gate Source TO-236AB (SOT-23) top view ...

Page 2

... GS D 1.1 %/° 4.5V 120mA 25V 100mA 0V 25V 1MHz 25V 120mA 25Ω GEN 15 1 120mA 120mA gen INPUT TN2130 I DRM 200mA OUTPUT D.U.T. ...

Page 3

... DS 0.5 0.4 V =10V 0 1.0 0.8 = -55°C 0.6 0.4 0.2 0.4 0.5 1.0 0.8 0.6 0.4 0.2 100 1000 3 Saturation Characteristics V = 10V (volts) DS Power Dissipation vs. Temperature SOT- 100 125 T (°C) A Thermal Response Characteristics SOT- 25° 0.36W 0 0.001 0.01 0.1 1.0 t (seconds) p TN2130 150 10 ...

Page 4

... On-Resistance vs. Drain Current 10V GS 0.2 0.4 0.6 0.8 1.0 I (amperes and R Variation with Temperature 4.5V, 120mA DS(ON 1mA GS(th 100 150 T (°C) j Gate Drive Dynamic Characteristics V = 10V 40V DS 28pF 0.6 0.2 0.4 0.8 1.0 Q (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com TN2130 2.0 1.6 1.2 0.8 0.4 0 11/12/01 ...

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