RT1N150x Isahaya Electronics Corporation, RT1N150x Datasheet - Page 2

• Manufacturer Part Number: RT1N150x
• Description: Transistor
• Manufacturer: Isahaya Electronics Corporation

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MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
Ｖ
SYMBOL
Ｖ
Ｔ ｓ ｔ ｇ
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Ｉ
Ｖ
Ｖ
Ｖ
Ｃ Ｅ （ ｓ ａ ｔ ）
Ｉ
ｈ
Ｒ
Ｉ
Ｐ
Ｔ ｊ
Ｃ Ｂ Ｏ
ｆ
Ｃ Ｍ
Ｃ Ｂ Ｏ
Ｅ Ｂ Ｏ
Ｃ Ｅ Ｏ
Ｃ
Ｆ Ｅ
Ｔ
１
Ｃ
1000
100
10
0.1
10
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
1
0
1
V
V
CE
INPUT OFF VOLTAGE Ｖ
CE
=5V
COLLECTOR CURRENT Ｉ
0.4
=0.2V
PARAMETER
PARAMETER
V S . C O L L E C T O R C U R R E N T
V S . I N P U T O F F V O L T A G E
C O L L E C T O R C U R R E N T
I N P U T O N V O L T A G E
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
Ｒ Ｔ １ Ｎ １ ５ ０ Ｘ SERIES
Ｉ （ ＯＦ Ｆ ）
Ｃ
（ ｍＡ ）
I
V
V
I
V
1.6
C
C
（ Ｖ ）
RT1N150U
-55∼+150
CB
CE
CE
=100μA，R
=5V，I
=1mA，I
=6V，I
=50V，I
150
+150
100
C
E
2
E
B
=-10mA
=1mA
=0
=0.1mA
BE
TEST CONDITION
RT1N150M
=∞
1000
100
10
1
RATING
200
100
200
V
50
50
6
CE
-55∼+150
=5V
RT1N150C
COLLECTOR CURRENT Ｉ
+150
D C F O R W A R D C U R R E N T G A IN
V S . C O L L E C T O R C U R R E N T
10
RT1N150S
450
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
100
50
Ｃ
（ ｍＡ ）
LIMIT
UNIT
TYP
mW
100
200
mA
mA
℃
℃
V
V
V
100
〈 Transistor 〉
MAX
0.1
0.3
UNIT
MHz
μA
kΩ
−
V
V