ADP5065ACBZ-1-R7 Analog Devices, Inc., ADP5065ACBZ-1-R7 Datasheet - Page 7

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ADP5065ACBZ-1-R7

Manufacturer Part Number
ADP5065ACBZ-1-R7
Description
Fast Charge Battery Manager With Power Path And
Manufacturer
Analog Devices, Inc.
Datasheet
Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Table 1. AD5065 Absolute Maximum Ratings
Parameter
VIN1:2 to PGND1:2
Ambient Temperature Range
Storage Temperature Range
Operating Junction Temperature
Range
Soldering Conditions
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other condition s above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
All other pins to AGND
Rating
–0.5 V to +20V
–0.3 V to +6 V
–40°C to +85°C
–65°C to +150°C
–40°C to +125°C
JEDEC J-STD-020
Rev. PrA | Page 7 of 22
THERMAL RESISTANCE
θ
for device soldered in circuit board for surface mount packages.
Table 2. Thermal Resistance
Package Type
5x4 Array WLCSP 0.5mm pitch (2.75mm * 2.08mm)
- Based on a JEDEC, 2S2P, 4layer board with 0m/s
airflow
Maximum Power Dissipation
The maximum safe power dissipation in the ADP5065 package
is limited by the associated rise in junction temperature (T
the die. At approximately 150°C, which is the glass transition
temperature, the plastic will change its properties. Even
temporarily exceeding this temperature limit may change the
stresses that the package exerts on the die, permanently shifting
the parametric performance of the ADP5065. Exceeding a
junction temperature of 175°C for an extended period of time
can result in changes in the silicon devices potentially causing
failure.
JA
is specified for the worst-case conditions, i.e., θ
ADP5065
JA
is specified
θ
55
JA
J
) on
Unit
°C/W

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