BF995 Vishay Telefunken, BF995 Datasheet

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BF995

Manufacturer Part Number
BF995
Description
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
Manufacturer
Vishay Telefunken
Datasheet

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N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
BF995 Marking: MB
Plastic case (SOT 143)
1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
Document Number 85009
Rev. 3, 20-Jan-99
D
D
D
amb
amb
2
3
Integrated gate protection diodes
High cross modulation performance
Low noise figure
Parameter
= 25
= 25
94 9279
_
_
1
C, unless otherwise specified
C, unless otherwise specified
4
Parameter
plated with 35
m
m Cu
Test Conditions
13 579
Test Conditions
T
amb
60 ° C
G
G
12623
D
D
Electrostatic sensitive device.
Observe precautions for handling.
2
1
High AGC-range
Low feedback capacitance
Type
3
www.vishay.de FaxBack +1-408-970-5600
Symbol
R
Symbol
I
thChA
G1/G2SM
V
T
P
T
I
stg
DS
Ch
D
tot
Vishay Telefunken
–55 to +150
Value
450
Value
200
150
20
30
10
BF995
D
S
Unit
mW
Unit
K/W
mA
mA
° C
° C
V
1 (7)

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BF995 Summary of contents

Page 1

... Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 9279 3 4 BF995 Marking: MB Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 Absolute Maximum Ratings unless otherwise specified amb Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current ...

Page 2

... G2S G1S G2S G1S BF995 G1S G1S G2S G2S BF995A BF995B –V G2S –V G1S unless otherwise specified amb Test Conditions = 4 V G2S = 0.5 mS 200 MHz L = 0.5 mS 200 MHz ...

Page 3

... Figure 5. Gate 1 Input Capacitance vs. 4.0 3.6 =0.5V 3.2 2.8 0V 2.4 2.0 1.6 1.2 –0.5V 0.8 0 –2 –1 96 12164 Figure 6. Gate 2 Input Capacitance vs. BF995 Vishay Telefunken =15V V =5V G2S – Gate 1 Source Voltage ( V ) G1S Gate 1 Source Voltage V =15V DS V =4V G2S f=1MHz V – Gate 1 Source Voltage ( V ) ...

Page 4

... BF995 Vishay Telefunken 3.0 V =4V G2S 2.5 f=1MHz 2.0 1.5 1.0 0 – Drain Source Voltage ( 12165 DS Figure 7. Output Capacitance vs. Drain Source Voltage 18 f=700MHz 16 600MHz 14 12 500MHz 10 400MHz 8 300MHz 6 V =15V DS V 200MHz G2S 4 I =5...20mA D 2 f=50...700MHz 100MHz ...

Page 5

... Figure 13. Reverse transmission coefficient j0.5 30 j0 20mA D 10mA –j0.2 –30 5mA –30 –j0.5 –60 12 923 Figure 14. Output reflection coefficient BF995 Vishay Telefunken 300 600 0.04 0.08 0 –30 –60 – 0 100 300 500 –j5 700 MHz – ...

Page 6

... BF995 Vishay Telefunken Dimensions in mm www.vishay.de FaxBack +1-408-970-5600 6 (7) 96 12240 Document Number 85009 Rev. 3, 20-Jan-99 ...

Page 7

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone 7131 67 2831, Fax number 7131 67 2423 Document Number 85009 Rev. 3, 20-Jan-99 BF995 Vishay Telefunken www.vishay.de FaxBack +1-408-970-5600 7 (7) ...

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